K40A10N1-VB Product details
Product introduction:
K40A10N1-VB is a high-performance single N-channel MOSFET in TO220F package, designed for power applications requiring high efficiency and high current. The maximum drain-source voltage (VDS) of this MOSFET can reach 60V, which is suitable for various medium and low voltage power management and switching applications. Its gate-source voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 2.5V, ensuring that it can be turned on quickly under low voltage conditions. The drain-source on-resistance (RDS(ON)) of K40A10N1-VB is 12mΩ and 10mΩ at 4.5V and 10V respectively, showing excellent conductivity and low energy loss. This device uses trench technology (Trench), which can provide higher power density and lower conduction loss, making it very suitable for applications requiring high current.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: K40A10N1-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **Drain-source on-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench technology (Trench)
- **Operating temperature range**: -55°C to 150°C (junction temperature)
- **Power dissipation**: Depends on heat dissipation design and application environment
Domain and module applications:
1. **DC-DC Converter**
K40A10N1-VB is well suited for DC-DC converters, where it can efficiently convert between different voltages, and its low RDS(ON) value reduces energy loss and improves system efficiency. This makes the MOSFET an ideal choice for high-frequency switching power supplies, which are widely used in computer power supplies and power adapters.
2. **Motor Drive**
Due to its high current carrying capacity, K40A10N1-VB is also well suited for motor drive applications, such as motor control in home appliances and industrial automation equipment. Its fast response characteristics ensure efficient and stable operation of the motor.
3. **Solar Inverter**
In a solar inverter, the K40A10N1-VB processes the current from the solar panel and converts it into usable AC power. Its high reliability and low on-resistance make it a key component for efficient power management in solar systems.
4. **Power Management System**
K40A10N1-VB is suitable for various power management systems, such as uninterruptible power supply (UPS) and battery management system. Due to its excellent thermal and electrical performance, it can ensure reliable operation under high load and high temperature environment.
In summary, K40A10N1-VB is a high-efficiency, high-performance N-channel MOSFET, which is widely used in DC-DC converters, motor drives, solar inverters and power management, and can provide efficient and stable solutions for a variety of power management systems.
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