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K4075-ZK-E1-AY-VB Product details
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K4075-ZK-E1-AY-VB Product Introduction
K4075-ZK-E1-AY-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. The device has a maximum drain-to-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 2.5V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) of the K4075 is 6mΩ, and at a gate-source voltage of 10V it is only 5mΩ, showing extremely low power consumption characteristics and excellent conduction performance, supporting currents up to 85A. The trench technology of this MOSFET enables it to excel in high-efficiency switching applications, making it ideal for use in a variety of power management and control systems.
K4075-ZK-E1-AY-VB is a high-efficiency single N-channel MOSFET in a TO252 package, designed for low voltage and high current applications. The device has a maximum drain-to-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 2.5V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) of the K4075 is 6mΩ, and at a gate-source voltage of 10V it is only 5mΩ, showing extremely low power consumption characteristics and excellent conduction performance, supporting currents up to 85A. The trench technology of this MOSFET enables it to excel in high-efficiency switching applications, making it ideal for use in a variety of power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter | Description|
|---------------------|-------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Maximum drain voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=4.5V |
| | 5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench technology (Trench) |
| Parameter | Description|
|---------------------|-------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Maximum drain voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=4.5V |
| | 5mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 85A |
| **Technology** | Trench technology (Trench) |
Domain and module applications：
Applications and Module Examples
The K4075-ZK-E1-AY-VB MOSFET is suitable for a variety of applications and modules, including:
1. **Power Management**: This MOSFET is very effective in DC-DC converters and switching power supplies, capable of handling currents up to 85A, and is suitable for use in high-efficiency power systems such as servers and industrial power equipment to reduce energy losses.
2. **Motor Drive**: In motor control applications, the K4075 can be used as a high-side or low-side switch, supporting high current control, suitable for power tools, electric bicycles, and home appliances.
3. **LED Drive**: In LED lighting systems, this MOSFET can be used as a switching element to regulate current, ensuring high efficiency and long life of lighting equipment.
4. **Automotive Electronics**: Suitable for automotive power control units and drive modules such as power windows, seat adjusters, and lighting controls, meeting automotive requirements for miniaturization and high efficiency.
5. **Portable devices**: The small package and high current capability of the K4075 make it an ideal choice for power management in portable electronic devices, helping to improve battery efficiency.
The K4075-ZK-E1-AY-VB MOSFET has become the preferred device for electronic engineers in low-voltage and high-current designs due to its excellent electrical performance and diverse application areas.
The K4075-ZK-E1-AY-VB MOSFET is suitable for a variety of applications and modules, including:
1. **Power Management**: This MOSFET is very effective in DC-DC converters and switching power supplies, capable of handling currents up to 85A, and is suitable for use in high-efficiency power systems such as servers and industrial power equipment to reduce energy losses.
2. **Motor Drive**: In motor control applications, the K4075 can be used as a high-side or low-side switch, supporting high current control, suitable for power tools, electric bicycles, and home appliances.
3. **LED Drive**: In LED lighting systems, this MOSFET can be used as a switching element to regulate current, ensuring high efficiency and long life of lighting equipment.
4. **Automotive Electronics**: Suitable for automotive power control units and drive modules such as power windows, seat adjusters, and lighting controls, meeting automotive requirements for miniaturization and high efficiency.
5. **Portable devices**: The small package and high current capability of the K4075 make it an ideal choice for power management in portable electronic devices, helping to improve battery efficiency.
The K4075-ZK-E1-AY-VB MOSFET has become the preferred device for electronic engineers in low-voltage and high-current designs due to its excellent electrical performance and diverse application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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