K4066_12-VB Product details
Product introduction:
K4066_12-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium-high voltage and high current applications. Its drain-to-source voltage (VDS) is 60V, suitable for a variety of circuits requiring medium voltage control. The gate-to-source voltage (VGS) of this MOSFET is ±20V, ensuring stability and reliability under different operating conditions. The threshold voltage (Vth) of K4066_12-VB is 3V, which enables it to turn on quickly at a lower gate voltage, suitable for high-efficiency switching applications. At VGS=10V, its on-resistance (RDS(ON)) is only 4mΩ, providing extremely low conduction losses, suitable for high-current applications, and rated current (ID) up to 150A. The trench technology used further improves its performance in efficiency and heat dissipation, making it excel in the field of high-performance power supplies and motor control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: K4066_12-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain to source voltage (VDS)**: 60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Rated current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications:
K4066_12-VB MOSFET shows excellent application potential in multiple fields and modules, including:
1. **Power management**: Due to its extremely low on-resistance and high rated current, K4066_12-VB is very suitable for switching power supplies (SMPS), DC-DC converters and high-efficiency power modules, which can achieve efficient power conversion and management and reduce system energy consumption.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching element to ensure fast response and precise control of the motor, improve the performance and response speed of the overall system, and is suitable for power tools, electric vehicles and industrial automation equipment.
3. **Battery management system**: K4066_12-VB is suitable for battery management systems (BMS), providing efficient switching control during charging and discharging, helping to improve charging efficiency, extend battery life, and ensure stable operation of the battery system.
4. **Inverter**: In solar inverters, wind inverters and other types of inverters, K4066_12-VB can be used as a power switch to help achieve efficient energy conversion and improve the overall performance and stability of the system.
5. **High-power LED driver**: In high-power LED lighting systems, this MOSFET can provide stable current control to ensure uniform brightness and long service life of LEDs, which is particularly suitable for commercial lighting, outdoor lighting and industrial lighting applications.
6. **Industrial automation equipment**: Due to its high current carrying capacity and high efficiency, K4066_12-VB can be widely used in power modules, drive modules and control modules in various industrial automation equipment to improve the overall efficiency and reliability of the equipment.
Through these application examples, K4066_12-VB demonstrates its wide application potential and excellent performance in medium and high voltage and high current environments, making it an ideal choice for various high-efficiency circuit designs.
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