K4065-DL-1E-VB Product details
Product introduction:
K4065-DL-1E-VB is a high-performance single N-channel MOSFET in a TO263 package, suitable for applications requiring higher voltage and current. The device has a maximum drain-to-source voltage (VDS) of 80V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. The on-resistance (RDS(ON)) of the K4065-DL-1E-VB is 10mΩ at a gate-source voltage of 4.5V, and only 6mΩ at a gate-source voltage of 10V, showing excellent conduction performance and extremely low conduction losses, supporting currents up to 120A. Its trench technology enables the device to achieve efficient switching performance, suitable for power conversion and control systems that require high efficiency and stability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameter | Description|
|---------------------|----------------------------|
| **Package** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **Maximum drain voltage (VDS)** | 80V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=4.5V |
| | 6mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 120A |
| **Technology** | Trench technology (Trench) |
Domain and module applications:
K4065-DL-1E-VB MOSFET performs well in a variety of power and current control applications. Here are some typical application fields and modules:
1. **Power management system**: K4065-DL-1E-VB is very suitable for switching power supplies (SMPS) and DC-DC converters. It can efficiently handle current loads up to 120A, provide low power consumption and high conversion efficiency, and is widely used in servers, data centers and industrial power supply equipment.
2. **Motor control**: In motor drive applications, this MOSFET is suitable for occasions where large currents need to be accurately controlled, such as electric vehicles, industrial automation, robots and power tools. It can be used as an efficient switching element to control motor operation and speed regulation.
3. **Automotive electronics**: The high voltage and high current capabilities of K4065-DL-1E-VB make it very suitable for use in automotive electronic equipment, such as high-power modules such as electric seat adjustment, pumps and electric steering control.
4. **Photovoltaic inverter**: In solar photovoltaic systems, this MOSFET can be used in the power conversion module in the inverter to help effectively convert DC power into AC power while maintaining high energy efficiency and reducing power consumption, which is suitable for solar power generation applications.
5. **UPS (uninterruptible power supply)**: In UPS systems, K4065-DL-1E-VB can be used to control the battery charging and discharging process and inverter conversion to ensure stable power output during power outages and support the continuous operation of key equipment.
K4065-DL-1E-VB MOSFET has the characteristics of high voltage, high current and low conduction loss, and is widely used in various industrial and consumer electronic applications that require efficient power conversion and control.
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