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K4057-ZK-VB Product details
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K4057-ZK-VB Product Introduction
K4057-ZK-VB is a single N-channel MOSFET in TO252 package, designed for high efficiency and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of low-voltage power supplies and switching circuits. The gate-source voltage (VGS) of this MOSFET can reach up to ±20V, which can provide flexible driving options. The threshold voltage (Vth) of K4057-ZK-VB is 1.7V, with excellent conduction performance, and the on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V, which is further reduced to 7mΩ at VGS=10V, and the rated current can reach 70A. This low on-resistance design enables K4057-ZK-VB to significantly reduce power consumption and heat generation under high current conditions, thereby improving the overall efficiency and reliability of the system. Using Trench technology, K4057-ZK-VB provides fast switching characteristics and good current control capabilities, suitable for a variety of modern electronic devices and power management systems.
K4057-ZK-VB is a single N-channel MOSFET in TO252 package, designed for high efficiency and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of low-voltage power supplies and switching circuits. The gate-source voltage (VGS) of this MOSFET can reach up to ±20V, which can provide flexible driving options. The threshold voltage (Vth) of K4057-ZK-VB is 1.7V, with excellent conduction performance, and the on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V, which is further reduced to 7mΩ at VGS=10V, and the rated current can reach 70A. This low on-resistance design enables K4057-ZK-VB to significantly reduce power consumption and heat generation under high current conditions, thereby improving the overall efficiency and reliability of the system. Using Trench technology, K4057-ZK-VB provides fast switching characteristics and good current control capabilities, suitable for a variety of modern electronic devices and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value|
|------------------|----------------------|
| Model| K4057-ZK-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 9mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 7mΩ @ VGS=10V |
| Maximum leakage current (ID) | 70A |
| Technology| Trench |
| Parameter| Value|
|------------------|----------------------|
| Model| K4057-ZK-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 9mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 7mΩ @ VGS=10V |
| Maximum leakage current (ID) | 70A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
K4057-ZK-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: The low on-resistance and high current capability of K4057-ZK-VB make it an ideal choice for efficient power management systems, which can optimize power conversion and reduce energy loss.
2. **Motor drive**: In the motor control module, this MOSFET can be used to achieve efficient switch control, suitable for motor start and stop and speed regulation, ensuring the stability and reliability of the system.
3. **LED lighting**: K4057-ZK-VB performs well in LED drive circuits, providing stable current output to ensure stable and uniform brightness of the light source.
4. **Chargers and adapters**: In various chargers and adapters, K4057-ZK-VB can be used to control the flow of current to achieve a fast and efficient charging process.
5. **Consumer Electronics**: This MOSFET is suitable for various consumer electronics products, such as power management of smartphones, tablets and other mobile devices, providing reliable support for power switching and control.
In short, K4057-ZK-VB is an ideal choice for high current and low voltage applications with its excellent performance and wide application potential.
K4057-ZK-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: The low on-resistance and high current capability of K4057-ZK-VB make it an ideal choice for efficient power management systems, which can optimize power conversion and reduce energy loss.
2. **Motor drive**: In the motor control module, this MOSFET can be used to achieve efficient switch control, suitable for motor start and stop and speed regulation, ensuring the stability and reliability of the system.
3. **LED lighting**: K4057-ZK-VB performs well in LED drive circuits, providing stable current output to ensure stable and uniform brightness of the light source.
4. **Chargers and adapters**: In various chargers and adapters, K4057-ZK-VB can be used to control the flow of current to achieve a fast and efficient charging process.
5. **Consumer Electronics**: This MOSFET is suitable for various consumer electronics products, such as power management of smartphones, tablets and other mobile devices, providing reliable support for power switching and control.
In short, K4057-ZK-VB is an ideal choice for high current and low voltage applications with its excellent performance and wide application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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