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K3993-ZK-VB Product details
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K3993-ZK-VB Product Introduction
K3993-ZK-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency and low-resistance applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of low-voltage power supplies and drive circuits. The gate-source voltage (VGS) of this MOSFET can reach up to ±20V, providing flexible drive options. The threshold voltage (Vth) of K3993-ZK-VB is 1.7V, and it exhibits excellent conduction performance when turned on, with ultra-low on-resistance (RDS(ON)), 3mΩ at VGS=4.5V, 2mΩ at VGS=10V, and the rated current can reach 100A. This makes K3993-ZK-VB particularly suitable for high-current applications to reduce power consumption and heat generation. Using Trench technology, K3993-ZK-VB performs well in improving switching speed and conduction efficiency, making it suitable for a variety of modern electronic devices.
K3993-ZK-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency and low-resistance applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of low-voltage power supplies and drive circuits. The gate-source voltage (VGS) of this MOSFET can reach up to ±20V, providing flexible drive options. The threshold voltage (Vth) of K3993-ZK-VB is 1.7V, and it exhibits excellent conduction performance when turned on, with ultra-low on-resistance (RDS(ON)), 3mΩ at VGS=4.5V, 2mΩ at VGS=10V, and the rated current can reach 100A. This makes K3993-ZK-VB particularly suitable for high-current applications to reduce power consumption and heat generation. Using Trench technology, K3993-ZK-VB performs well in improving switching speed and conduction efficiency, making it suitable for a variety of modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| Parameter| Value|
|------------------|----------------------|
| Model| K3993-ZK-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 3mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 2mΩ @ VGS=10V |
| Maximum leakage current (ID) | 100A |
| Technology| Trench |
| Parameter| Value|
|------------------|----------------------|
| Model| K3993-ZK-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 30V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 3mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 2mΩ @ VGS=10V |
| Maximum leakage current (ID) | 100A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
K3993-ZK-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: Due to its low on-resistance and high current capability, K3993-ZK-VB is very suitable for efficient power management systems, which can optimize power efficiency and reduce energy loss.
2. **Motor drive**: In motor control modules, this MOSFET can be used for switching control of high current motors, adapting to various load conditions, ensuring system reliability and stability.
3. **LED lighting**: In LED lighting drive circuits, K3993-ZK-VB can provide efficient current control to ensure the brightness and stability of the light source, especially in dimming applications.
4. **Switching power supply**: This MOSFET can be used for efficient switching in switching power supplies (SMPS) to achieve voltage conversion and power regulation, improving the overall performance of the system.
5. **Battery Management System**: During the battery charging and discharging process, K3993-ZK-VB can be used to monitor and control the current flow to ensure the safety and life of the battery.
In summary, K3993-ZK-VB is an ideal choice for high current and low voltage applications with its excellent performance and versatility.
K3993-ZK-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: Due to its low on-resistance and high current capability, K3993-ZK-VB is very suitable for efficient power management systems, which can optimize power efficiency and reduce energy loss.
2. **Motor drive**: In motor control modules, this MOSFET can be used for switching control of high current motors, adapting to various load conditions, ensuring system reliability and stability.
3. **LED lighting**: In LED lighting drive circuits, K3993-ZK-VB can provide efficient current control to ensure the brightness and stability of the light source, especially in dimming applications.
4. **Switching power supply**: This MOSFET can be used for efficient switching in switching power supplies (SMPS) to achieve voltage conversion and power regulation, improving the overall performance of the system.
5. **Battery Management System**: During the battery charging and discharging process, K3993-ZK-VB can be used to monitor and control the current flow to ensure the safety and life of the battery.
In summary, K3993-ZK-VB is an ideal choice for high current and low voltage applications with its excellent performance and versatility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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