K3911-VB Product details
Product introduction:
The K3911-VB is a high voltage single N-channel MOSFET in a TO-3P package, designed for applications requiring high voltage resistance and good switching performance. It has a drain-source voltage (VDS) of up to 600V and a gate-source voltage (VGS) of ±30V, which can meet the operating requirements under various high voltage conditions. The device has a gate-source threshold voltage (Vth) of 3.5V and can switch efficiently at lower gate-source voltages. The K3911-VB has an on-resistance (RDS(ON)) of 190mΩ and performs well at a gate-source voltage of 10V, ensuring low power loss under high current conditions. The SJ_Multi-EPI technology it uses improves its performance and reliability, making it an ideal choice for high-power and high-frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO-3P
- **MOSFET configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: Depending on the heat dissipation conditions, it can usually reach 50W or higher
- **Switching time**: Suitable for high-frequency applications with faster switching characteristics
Domain and module applications:
1. **High Voltage Power Converters**:
- The K3911-VB is widely used in high voltage power converters, such as AC-DC and DC-DC converters. The high voltage withstand capability and excellent conduction performance of this MOSFET enable it to efficiently handle high power loads and provide stable performance in power management.
2. **Power Electronics Devices**:
- In power electronics devices, such as inverters, rectifiers, and motor drives, the K3911-VB can be used to achieve efficient power conversion. These devices typically require components that can withstand high voltages and high currents, and the performance of the K3911-VB can meet these requirements, ensuring the reliability and efficiency of the power system.
3. **Renewable Energy Systems**:
- In solar inverters and wind power generation systems, this MOSFET can be used for efficient power conversion to help optimize energy utilization. The high voltage characteristics of the K3911-VB are well suited for converting the high voltage DC power generated in renewable energy systems into electrical energy suitable for transmission and use.
4. **Industrial Control and Automation**:
- The K3911-VB also performs well in industrial automation equipment, such as inverters and servo drives. The high power handling capability and fast switching characteristics of this MOSFET enable it to cope with complex loads and stringent requirements in industrial environments, ensuring efficient and stable operation of the equipment.
In summary, the K3911-VB MOSFET is a high voltage, high performance device suitable for a wide range of applications in high voltage power converters, power electronics equipment, renewable energy systems, and industrial control and automation, providing excellent efficiency and reliability for a variety of high power applications.
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