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K3880-VB Product details
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K3880-VB MOSFET Product Introduction
The K3880-VB is a high voltage single N-channel MOSFET in a TO-3P package, designed for applications that require high voltage resistance and high power handling capabilities. It has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, which enables it to perform well in high voltage environments. The device has a gate-source threshold voltage (Vth) of 3.5V, which enables efficient switching at lower gate-source voltages. The K3880-VB has an on-resistance (RDS(ON)) of 750mΩ and performs well at a gate-source voltage of 10V. Although its on-resistance is relatively high, its stability and reliability in high voltage applications are extremely important. This MOSFET uses SJ_Multi-EPI technology to further enhance its current handling capability and voltage resistance characteristics, making it very suitable for high-power and high-frequency power conversion systems.
The K3880-VB is a high voltage single N-channel MOSFET in a TO-3P package, designed for applications that require high voltage resistance and high power handling capabilities. It has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, which enables it to perform well in high voltage environments. The device has a gate-source threshold voltage (Vth) of 3.5V, which enables efficient switching at lower gate-source voltages. The K3880-VB has an on-resistance (RDS(ON)) of 750mΩ and performs well at a gate-source voltage of 10V. Although its on-resistance is relatively high, its stability and reliability in high voltage applications are extremely important. This MOSFET uses SJ_Multi-EPI technology to further enhance its current handling capability and voltage resistance characteristics, making it very suitable for high-power and high-frequency power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
K3880-VB Detailed parameter description
- **Package type**: TO-3P
- **MOSFET configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: Depending on the heat dissipation conditions, it can usually reach 50W or higher
- **Switching time**: Suitable for high-frequency applications with faster switching characteristics
- **Package type**: TO-3P
- **MOSFET configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: Depending on the heat dissipation conditions, it can usually reach 50W or higher
- **Switching time**: Suitable for high-frequency applications with faster switching characteristics
Domain and module applications：
Applications and Module Examples
1. **High Voltage Power Systems**:
- The K3880-VB is widely used in high voltage power converters, especially in situations where high voltage needs to be converted to low voltage, such as AC-DC converters and DC-DC converters. Its high drain-source voltage and superior switching characteristics enable it to handle high power efficiently.
2. **Power Electronics**:
- In power electronic devices, such as inverters and rectifiers, the K3880-VB can be used to achieve efficient power conversion. Its high voltage withstand capability makes it ideal for use in renewable energy systems such as solar and wind power, ensuring efficient transmission and conversion of electrical energy.
3. **Industrial Equipment**:
- This MOSFET is suitable for industrial control equipment such as motor drives and inverters, where it is able to handle high power loads and provide stable current and voltage control. Its reliability and durability in harsh environments ensure long-term stable operation of the equipment.
4. **Automotive Electronics**:
- In automotive electronic systems, K3880-VB can be applied to high-voltage battery management systems and electric drive systems. Its high voltage and good thermal performance can meet the stringent power management requirements of modern electric vehicles.
In summary, K3880-VB MOSFET is a high-voltage, high-performance device that is widely used in high-voltage power systems, power electronics, industrial equipment, and automotive electronics. It can provide excellent efficiency and reliability in a variety of high-power applications.
1. **High Voltage Power Systems**:
- The K3880-VB is widely used in high voltage power converters, especially in situations where high voltage needs to be converted to low voltage, such as AC-DC converters and DC-DC converters. Its high drain-source voltage and superior switching characteristics enable it to handle high power efficiently.
2. **Power Electronics**:
- In power electronic devices, such as inverters and rectifiers, the K3880-VB can be used to achieve efficient power conversion. Its high voltage withstand capability makes it ideal for use in renewable energy systems such as solar and wind power, ensuring efficient transmission and conversion of electrical energy.
3. **Industrial Equipment**:
- This MOSFET is suitable for industrial control equipment such as motor drives and inverters, where it is able to handle high power loads and provide stable current and voltage control. Its reliability and durability in harsh environments ensure long-term stable operation of the equipment.
4. **Automotive Electronics**:
- In automotive electronic systems, K3880-VB can be applied to high-voltage battery management systems and electric drive systems. Its high voltage and good thermal performance can meet the stringent power management requirements of modern electric vehicles.
In summary, K3880-VB MOSFET is a high-voltage, high-performance device that is widely used in high-voltage power systems, power electronics, industrial equipment, and automotive electronics. It can provide excellent efficiency and reliability in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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