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K3879-VB Product details

Product introduction:

1. K3879-VB MOSFET Product Introduction:
K3879-VB is a single N-channel MOSFET in a TO220F package, designed for high voltage applications. The device has a maximum drain-source voltage (VDS) of 800V and can handle gate-source voltages (VGS) of up to ±30V. Its turn-on voltage (Vth) is 3.5V, which is suitable for low-voltage drive circuit design. The on-resistance (RDS(ON)) of K3879-VB is 1100mΩ (at VGS of 10V), and it can carry a maximum drain current (ID) of 5A. Using SJ_Multi-EPI technology, the device performs well under high voltage conditions and is ideal for high-power and high-efficiency power management and conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 3.5V 5A 1100mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description of K3879-VB MOSFET:
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (multi-epitaxial technology)
- **Power dissipation (Pd)**: The specific value depends on the heat dissipation conditions and application scenarios
- **Switching speed**: Determined by circuit design and external conditions
- **Operating temperature range**: Typically -55°C to +150°C (refer to the product manual for the specific range)

Domain and module applications:

3. Application fields and module examples of K3879-VB:
1. **High-voltage power management**:
K3879-VB is suitable for high-voltage switching power supplies (SMPS) and inverters. It can withstand voltages up to 800V and is suitable for power supply designs that require high voltage and high efficiency. This makes it play an important role in power systems and industrial automation, such as for AC-DC and DC-DC conversion.

2. **Lighting control**:
In LED lighting and other high-voltage lighting equipment, K3879-VB can effectively control current and power, thereby achieving higher energy efficiency and better light output, and is suitable for commercial and industrial lighting systems.

3. **Electrical protection circuit**:
The high voltage withstand characteristics of K3879-VB make it an important part of the overvoltage protection circuit, which can be used in the protection circuit of power supplies and equipment to prevent overvoltage damage.

4. **Household appliances**:
In household appliances with high voltage applications, such as microwave ovens and air conditioners, K3879-VB can be used in power modules and drive circuits to improve the efficiency and reliability of the equipment.

In summary, K3879-VB MOSFET, with its high withstand voltage and low on-resistance, is suitable for high-voltage power management, lighting control, electrical protection circuits, household appliances and other fields, and can meet the needs of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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