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K3878-VB Product details

Product introduction:

1. K3878-VB MOSFET Product Introduction
K3878-VB is a single N-channel MOSFET in TO3P package, designed for high voltage applications. Its drain-source voltage (VDS) can reach 900V, which is suitable for applications requiring high voltage tolerance. The gate-source voltage (VGS) range of the device is ±30V, allowing flexible driving methods. The threshold voltage (Vth) of K3878-VB is 3.5V, which is suitable for a variety of control circuits. It uses SJ_Multi-EPI technology, has a relatively high on-resistance (RDS(ON) of 750mΩ @ VGS=10V), and can withstand a maximum drain current of 9A. The high voltage resistance and good switching characteristics of this MOSFET make it very suitable for use in high-voltage power management and conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
II. Detailed parameter description of K3878-VB
1. **Package type**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
7. **Drain current (ID)**: 9A
8. **Technology**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to +175°C
10. **Frequency response**: Suitable for medium and low frequency applications

Domain and module applications:

3. Application fields and module examples
1. **Power converter**: K3878-VB is very suitable for use in high-voltage DC-DC converters and AC-DC power converters. Due to its high drain-source voltage and relatively low on-resistance, the device can effectively reduce energy loss and improve overall efficiency during power conversion, and is suitable for the field of power electronics.

2. **Industrial equipment**: In industrial automation and control systems, K3878-VB can be used to drive high-power loads such as motor control and servo systems. Its high voltage characteristics can meet the high voltage requirements in industrial environments and ensure the reliability and stability of equipment.

3. **Renewable energy system**: This MOSFET can be used in photovoltaic inverters and wind power generation systems. Its high voltage capability makes it suitable for battery management and energy conversion, which can effectively improve energy conversion efficiency and system stability, thereby supporting the widespread application of renewable energy.

4. **Automotive electronics**: In the power management system of electric vehicles and hybrid vehicles, the high voltage capability of K3878-VB enables it to control batteries and motor drive systems. Its reliability and stability are key to achieving automotive electrification, especially in high-voltage battery management and power system control.

5. **Communication equipment**: In base stations and communication systems, this MOSFET can be used in high-voltage power modules to provide stable power to power amplifiers, ensuring reliable operation of communication equipment under high load conditions. The high-voltage characteristics and lower conduction losses of K3878-VB can help improve the overall efficiency and stability of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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