K3878-VB Product details
Product introduction:
K3878-VB is a single N-channel MOSFET in TO3P package, designed for high voltage applications. Its drain-source voltage (VDS) can reach 900V, which is suitable for applications requiring high voltage tolerance. The gate-source voltage (VGS) range of the device is ±30V, allowing flexible driving methods. The threshold voltage (Vth) of K3878-VB is 3.5V, which is suitable for a variety of control circuits. It uses SJ_Multi-EPI technology, has a relatively high on-resistance (RDS(ON) of 750mΩ @ VGS=10V), and can withstand a maximum drain current of 9A. The high voltage resistance and good switching characteristics of this MOSFET make it very suitable for use in high-voltage power management and conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
1. **Package type**: TO3P
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
7. **Drain current (ID)**: 9A
8. **Technology**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to +175°C
10. **Frequency response**: Suitable for medium and low frequency applications
Domain and module applications:
1. **Power converter**: K3878-VB is very suitable for use in high-voltage DC-DC converters and AC-DC power converters. Due to its high drain-source voltage and relatively low on-resistance, the device can effectively reduce energy loss and improve overall efficiency during power conversion, and is suitable for the field of power electronics.
2. **Industrial equipment**: In industrial automation and control systems, K3878-VB can be used to drive high-power loads such as motor control and servo systems. Its high voltage characteristics can meet the high voltage requirements in industrial environments and ensure the reliability and stability of equipment.
3. **Renewable energy system**: This MOSFET can be used in photovoltaic inverters and wind power generation systems. Its high voltage capability makes it suitable for battery management and energy conversion, which can effectively improve energy conversion efficiency and system stability, thereby supporting the widespread application of renewable energy.
4. **Automotive electronics**: In the power management system of electric vehicles and hybrid vehicles, the high voltage capability of K3878-VB enables it to control batteries and motor drive systems. Its reliability and stability are key to achieving automotive electrification, especially in high-voltage battery management and power system control.
5. **Communication equipment**: In base stations and communication systems, this MOSFET can be used in high-voltage power modules to provide stable power to power amplifiers, ensuring reliable operation of communication equipment under high load conditions. The high-voltage characteristics and lower conduction losses of K3878-VB can help improve the overall efficiency and stability of communication equipment.
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