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K3863-VB Product details

Product introduction:

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K3863-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, suitable for applications requiring high voltage resistance. The MOSFET has a gate-source voltage (VGS) tolerance range of ±30V and a threshold voltage (Vth) of 3.5V, ensuring fast turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of K3863-VB is 1000mΩ, suitable for lower current applications, while supporting a maximum continuous drain current of 5A. The use of SJ_Multi-EPI technology improves the performance of the MOSFET, especially in terms of switching losses and thermal management.

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**K3863-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
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- **Configuration:** Single N-channel
- **Package:** TO-252
- **VDS (drain-source voltage):** 650V
- **VGS (gate-source voltage):** ±30V
- **Vth (gate threshold voltage):** 3.5V
- **RDS(ON) @ VGS=10V:** 1000mΩ
- **ID (continuous drain current):** 5A
- **Technology:** SJ_Multi-EPI

K3863-VB is designed for high-voltage circuits and has high withstand voltage and conduction performance. It is an ideal choice for power management and high-voltage switching applications.

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**K3863-VB

Domain and module applications:

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1. **Power supply:**
K3863-VB can be used in high voltage power supply, especially in applications where high voltage needs to be converted to lower voltage. Its 650V withstand voltage performance enables it to withstand input voltage fluctuations while providing reliable output.

2. **LED driver:**
In LED drive circuits, the low RDS(ON) characteristics of K3863-VB make it an ideal choice for high-efficiency switching. It is able to operate at higher currents to ensure the brightness consistency and stability of LEDs under different operating conditions.

3. **Motor control:**
K3863-VB is suitable for motor control systems, especially high voltage DC motor applications. Its high withstand voltage and low switching losses help improve the efficiency and response speed of motor control.

4. **Inverter:**
In solar inverters or other types of inverters, the K3863-VB can efficiently handle the conversion from DC to AC, support high voltage operation, and ensure the stability and reliability of the system.

5. **High-voltage switch:**
This MOSFET is suitable for high-voltage load switch design, capable of switching high-voltage loads without compromising performance, and is suitable for use in industrial and power systems.

In these applications, the K3863-VB MOSFET provides high efficiency and reliability, especially in scenarios requiring high voltage and stable performance, ensuring the optimization and safe operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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