K3847-VB Product details
Product introduction:
The K3847-VB is a high-performance single N-channel MOSFET in a TO-220F package designed for a variety of high-power applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for operation in high-voltage environments. The device has a gate-source threshold voltage (Vth) of 2.5V, enabling efficient switching at lower gate-source voltages. The on-resistance (RDS(ON)) of the K3847-VB is 12mΩ and 10mΩ at gate-source voltages of 4.5V and 10V, respectively. This low on-resistance results in less power loss and higher efficiency under high current conditions. This MOSFET uses advanced Trench technology to provide faster switching speeds and higher performance, making it an ideal choice for high-power and high-frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO-220F
- **MOSFET configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=4.5V; 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology type**: Trench MOSFET
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: Suitable for applications up to 100W or more (depending on heat dissipation conditions)
- **Switching time**: Suitable for high frequency applications, fast response time
Domain and module applications:
1. **Power management**:
- K3847-VB performs well in power management modules and is widely used in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low on-resistance and high current carrying capacity can effectively reduce heat loss and improve system efficiency during high power conversion.
2. **Automotive electronics**:
- In modern cars, this MOSFET can be used in electric power steering systems, drive motor controllers, and battery management systems (BMS). Its high withstand voltage and fast switching capabilities can meet the stringent performance and reliability requirements of automotive electronics.
3. **Industrial applications**:
- K3847-VB is also suitable for industrial control systems such as inverters and servo drives. In these applications, its superior switching characteristics and high withstand voltage capabilities ensure efficient and reliable motor control to meet the operating needs of various industrial equipment.
4. **Consumer Electronics**:
- In consumer electronics products such as power tools, chargers and high-efficiency power adapters, the K3847-VB can be used as a switching element to improve the energy efficiency and performance of the equipment. Its fast switching capability and low on-resistance make it very suitable for consumer products that require high power and high efficiency.
In summary, the K3847-VB MOSFET is a versatile, high-performance device suitable for a wide range of applications in power management, automotive electronics, industrial control and consumer electronics, providing excellent efficiency and reliability for a variety of high-power applications.
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