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K3816-VB Product details
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K3816-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for power management and high-speed switching applications. It has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance range of ±20V, and uses advanced channel technology to provide superior efficiency, switching speed and thermal management performance. The device has a threshold voltage (Vth) of 1.7V, making it suitable for low-voltage drive circuits. It also has a low on-resistance (RDS(ON)) of 35mΩ at VGS=4.5V and 32mΩ at VGS=10V, ensuring minimal power loss during operation while supporting up to 50A of continuous leakage current.
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**K3816-VB
K3816-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for power management and high-speed switching applications. It has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) tolerance range of ±20V, and uses advanced channel technology to provide superior efficiency, switching speed and thermal management performance. The device has a threshold voltage (Vth) of 1.7V, making it suitable for low-voltage drive circuits. It also has a low on-resistance (RDS(ON)) of 35mΩ at VGS=4.5V and 32mΩ at VGS=10V, ensuring minimal power loss during operation while supporting up to 50A of continuous leakage current.
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**K3816-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Configuration:** Single N-channel
- **Package:** TO-263
- **VDS(Drain-Source Voltage):** 60V
- **VGS(Gate-Source Voltage):** ±20V
- **Vth(Gate Threshold Voltage):** 1.7V
- **RDS(ON) @ VGS=4.5V:** 35mΩ
- **RDS(ON) @ VGS=10V:** 32mΩ
- **ID(Continuous Drain Current):** 50A
- **Technology:** Trench Technology
The trench technology enhances the switching performance of the MOSFET and reduces conduction losses, making it suitable for applications requiring efficient energy handling.
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**K3816-VB
- **Configuration:** Single N-channel
- **Package:** TO-263
- **VDS(Drain-Source Voltage):** 60V
- **VGS(Gate-Source Voltage):** ±20V
- **Vth(Gate Threshold Voltage):** 1.7V
- **RDS(ON) @ VGS=4.5V:** 35mΩ
- **RDS(ON) @ VGS=10V:** 32mΩ
- **ID(Continuous Drain Current):** 50A
- **Technology:** Trench Technology
The trench technology enhances the switching performance of the MOSFET and reduces conduction losses, making it suitable for applications requiring efficient energy handling.
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**K3816-VB
Domain and module applications：
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1. **DC-DC Converters:**
The K3816-VB is ideally suited for use in DC-DC converters, where it can efficiently handle power conversion due to its low RDS(ON) and fast switching capabilities, making it suitable for use in a variety of voltage regulation circuits in telecommunications and computer systems.
2. **Motor Control:**
In motor drive circuits, especially in low to medium power applications, the high current capacity (50A) and low on-resistance (RDS(ON)) of this MOSFET ensure effective control while reducing heat generation, improving system reliability and performance.
3. **Battery Management System (BMS):**
In battery-powered systems, such as electric vehicles or portable devices, the K3816-VB can be used in power management circuits to provide efficient charge and discharge control switches, thanks to its channel technology that supports high current flow with minimal power loss.
4. **Load Switches:**
This MOSFET is also suitable for load switch designs, which require high-speed switching and low resistance when controlling power supplies in industrial equipment and consumer electronics.
5. **Solar Inverters:**
Given its efficient switching performance and ability to handle heavy power loads, the K3816-VB can be used in solar inverters, where fast and reliable DC-to-AC conversion is critical for grid-connected and energy storage systems.
In these applications, the K3816-VB MOSFET provides high efficiency and reliable operation, especially in scenarios that require frequent switching and minimized power losses.
1. **DC-DC Converters:**
The K3816-VB is ideally suited for use in DC-DC converters, where it can efficiently handle power conversion due to its low RDS(ON) and fast switching capabilities, making it suitable for use in a variety of voltage regulation circuits in telecommunications and computer systems.
2. **Motor Control:**
In motor drive circuits, especially in low to medium power applications, the high current capacity (50A) and low on-resistance (RDS(ON)) of this MOSFET ensure effective control while reducing heat generation, improving system reliability and performance.
3. **Battery Management System (BMS):**
In battery-powered systems, such as electric vehicles or portable devices, the K3816-VB can be used in power management circuits to provide efficient charge and discharge control switches, thanks to its channel technology that supports high current flow with minimal power loss.
4. **Load Switches:**
This MOSFET is also suitable for load switch designs, which require high-speed switching and low resistance when controlling power supplies in industrial equipment and consumer electronics.
5. **Solar Inverters:**
Given its efficient switching performance and ability to handle heavy power loads, the K3816-VB can be used in solar inverters, where fast and reliable DC-to-AC conversion is critical for grid-connected and energy storage systems.
In these applications, the K3816-VB MOSFET provides high efficiency and reliable operation, especially in scenarios that require frequent switching and minimized power losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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