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K3813-Z-E1-VB Product details

Product introduction:

K3813-Z-E1-VB MOSFET Product Introduction

The K3813-Z-E1-VB is a single N-channel MOSFET in a TO-252 package, designed for high-efficiency power management applications. It has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and can provide an on-resistance (RDS(ON)) as low as 6mΩ and 5mΩ at a gate-source voltage of 4.5V and 10V. This low on-resistance and rated current of up to 85A give it advantages in applications with high current demands and fast switching. The device uses advanced Trench technology to further improve its switching performance and energy efficiency, making it ideal for systems requiring high power density and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
K3813-Z-E1-VB Detailed parameter description

- **Package type**: TO-252
- **MOSFET configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V, 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench MOSFET
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Ptot)**: Depending on the heat dissipation, generally more than 100W
- **Switching time**: Fast switching, suitable for high frequency applications

Domain and module applications:

Applications and module examples

1. **Automotive electronics**:
- K3813-Z-E1-VB is ideal for power management modules in electric vehicles (EVs), such as motor controllers, DC-DC converters (DC-DC), and battery management systems (BMS). Its low RDS(ON) and high current capability help reduce power losses and improve overall system efficiency, especially at high currents.

2. **Communication equipment power modules**:
- In communication equipment in base stations, routers, and data centers, this MOSFET can be used in DC power supply systems and voltage regulator modules (VRMs). Its high-efficiency switching characteristics make it suitable for high-frequency power conversion and can significantly reduce heat loss in power-intensive applications.

3. **Consumer electronics**:
- K3813-Z-E1-VB is suitable for chargers, power adapters, and fast charging modules in consumer electronics such as smartphones, tablets, and laptops. Its high power density and fast response capability can provide lower heat loss and higher stability for fast charging.

4. **Industrial Equipment Control**:
- In applications such as industrial motor control and uninterruptible power supply (UPS), this MOSFET can be used to drive high power loads such as industrial fans, motors, and high power converters. Its high switching speed and low power loss make it very reliable in harsh industrial environments.

In summary, the K3813-Z-E1-VB MOSFET is a device suitable for efficient power conversion and management, and is widely used in automotive, communications, consumer electronics, and industrial fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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