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K3799-VB Product details
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Product Introduction: K3799-VB MOSFET
K3799-VB is a high-voltage N-channel MOSFET with a single N-channel configuration in a TO220F package. Its design focuses on efficient power conversion and is suitable for demanding high-voltage applications. The device supports a maximum drain-source voltage (VDS) of 900V and a gate drive voltage (VGS) of ±30V, providing reliable circuit protection, and is particularly suitable for driving and controlling high-voltage loads. Using the latest super-junction (SJ) and multi-epitaxial (Multi-EPI) technologies, the K3799-VB has lower on-resistance (RDS(ON)) and higher current handling capability.
K3799-VB is a high-voltage N-channel MOSFET with a single N-channel configuration in a TO220F package. Its design focuses on efficient power conversion and is suitable for demanding high-voltage applications. The device supports a maximum drain-source voltage (VDS) of 900V and a gate drive voltage (VGS) of ±30V, providing reliable circuit protection, and is particularly suitable for driving and controlling high-voltage loads. Using the latest super-junction (SJ) and multi-epitaxial (Multi-EPI) technologies, the K3799-VB has lower on-resistance (RDS(ON)) and higher current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Parameter description:
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Superjunction (SJ) Multi-epitaxy (Multi-EPI)
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Superjunction (SJ) Multi-epitaxy (Multi-EPI)
Domain and module applications：
Applications and modules:
1. **High-voltage power converter**: K3799-VB is ideal for use in high-voltage power converters, especially for industrial power systems and high-power inverters. These applications require stable power transmission and efficient power conversion under high voltage conditions. The 900V drain-source voltage and low on-resistance of K3799-VB ensure low power loss and higher current efficiency.
2. **Motor drive**: In motor drives, this MOSFET can be used in high-voltage DC or AC motor control circuits, especially for occasions that need to handle high current and high-voltage loads. Its superjunction technology improves power density and system efficiency and reduces heat generation.
3. **Renewable energy inverter**: In solar or wind power generation systems, this device can be used as part of a high-efficiency inverter to convert DC power collected from solar cells or wind turbines into AC power for use in home or industrial power grids.
4. **Lighting System**: K3799-VB is also suitable for high-voltage LED lighting control systems, where it is necessary to provide low-energy solutions while handling high-voltage power, ensuring efficient and long-lasting performance of lighting systems.
The high voltage handling capability and low on-resistance of this MOSFET make it suitable for multiple fields that require high voltage and efficient power transmission.
1. **High-voltage power converter**: K3799-VB is ideal for use in high-voltage power converters, especially for industrial power systems and high-power inverters. These applications require stable power transmission and efficient power conversion under high voltage conditions. The 900V drain-source voltage and low on-resistance of K3799-VB ensure low power loss and higher current efficiency.
2. **Motor drive**: In motor drives, this MOSFET can be used in high-voltage DC or AC motor control circuits, especially for occasions that need to handle high current and high-voltage loads. Its superjunction technology improves power density and system efficiency and reduces heat generation.
3. **Renewable energy inverter**: In solar or wind power generation systems, this device can be used as part of a high-efficiency inverter to convert DC power collected from solar cells or wind turbines into AC power for use in home or industrial power grids.
4. **Lighting System**: K3799-VB is also suitable for high-voltage LED lighting control systems, where it is necessary to provide low-energy solutions while handling high-voltage power, ensuring efficient and long-lasting performance of lighting systems.
The high voltage handling capability and low on-resistance of this MOSFET make it suitable for multiple fields that require high voltage and efficient power transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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