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K3797-VB Product details
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Product Introduction
K3797-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to 650V and can withstand a drain current (ID) of up to 20A. It uses Plannar technology and has a low on-resistance (RDS(ON)), making it very efficient in power management and switching circuits, suitable for high power electronic devices and power conversion applications.
K3797-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to 650V and can withstand a drain current (ID) of up to 20A. It uses Plannar technology and has a low on-resistance (RDS(ON)), making it very efficient in power management and switching circuits, suitable for high power electronic devices and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K3797-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage(Vth)**: 3.5V
- **RDS(ON)**: 320mΩ (VGS=10V)
- **ID**: 20A
- **Technology**: Plannar
- **Model**: K3797-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage(Vth)**: 3.5V
- **RDS(ON)**: 320mΩ (VGS=10V)
- **ID**: 20A
- **Technology**: Plannar
Domain and module applications：
Applications and modules
The K3797-VB MOSFET is widely used in a variety of fields, especially power electronics and power management systems. In industrial power supplies, it can operate reliably under high voltage and high current conditions, and is suitable for use in devices such as switching power supplies and inverters. In addition, the device is suitable for use in solar inverters and battery management systems to ensure efficient energy conversion and control. It can also be used in electric vehicle chargers, LED driver power supplies, and other circuits that require high-power switches to meet high voltage and high efficiency requirements. In the fields of automotive electronics and home appliances, the K3797-VB can also provide stable performance and improve the efficiency and reliability of the overall system.
The K3797-VB MOSFET is widely used in a variety of fields, especially power electronics and power management systems. In industrial power supplies, it can operate reliably under high voltage and high current conditions, and is suitable for use in devices such as switching power supplies and inverters. In addition, the device is suitable for use in solar inverters and battery management systems to ensure efficient energy conversion and control. It can also be used in electric vehicle chargers, LED driver power supplies, and other circuits that require high-power switches to meet high voltage and high efficiency requirements. In the fields of automotive electronics and home appliances, the K3797-VB can also provide stable performance and improve the efficiency and reliability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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