K3767_06-VB Product details
Product introduction:
K3767_06-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 650V and can withstand a drain current (ID) of up to 2A. The device uses Plannar technology and has a moderate on-resistance, suitable for high voltage and low power power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: K3767_06-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage(Vth)**: 3.5V
- **RDS(ON)**: 1700mΩ (VGS=10V)
- **ID**: 2A
- **Technology**: Plannar
Domain and module applications:
Technical support:
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