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K3669-VB Product details
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K3669-VB Product Introduction
K3669-VB is a high-performance single N-channel MOSFET in TO252 package, designed for power management and switching applications. Its maximum drain-source voltage (VDS) is 100V, suitable for medium voltage applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which enables fast switching at a lower gate-source voltage. The on-resistance (RDS(ON)) is 114mΩ (@VGS=10V), providing good current conduction capability, and the maximum drain current is 15A, suitable for high-efficiency circuits.
K3669-VB is a high-performance single N-channel MOSFET in TO252 package, designed for power management and switching applications. Its maximum drain-source voltage (VDS) is 100V, suitable for medium voltage applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which enables fast switching at a lower gate-source voltage. The on-resistance (RDS(ON)) is 114mΩ (@VGS=10V), providing good current conduction capability, and the maximum drain current is 15A, suitable for high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K3669-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (@ VGS = 10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (@ VGS = 10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power converter**: K3669-VB is suitable for DC-DC converters and power adapters. By effectively controlling the switching state, the conversion efficiency is improved, which is suitable for consumer electronics and industrial equipment.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching element and is widely used in power tools, household appliances and automation systems to ensure high-performance motor drive.
3. **LED drive circuit**: This MOSFET can provide stable current output in LED drive, which is suitable for various lighting applications, including commercial and home lighting solutions.
4. **Battery management system**: K3669-VB can be used for battery charging and management, helping to optimize the charging and discharging process, which is suitable for electric vehicles and renewable energy systems.
5. **Consumer electronics**: Its low on-resistance and high current carrying capacity make it an ideal choice for consumer electronic devices such as smartphones and tablets, ensuring efficient and stable power management.
K3669-VB has become an important part of modern electronic design due to its excellent performance and wide applicability.
1. **Power converter**: K3669-VB is suitable for DC-DC converters and power adapters. By effectively controlling the switching state, the conversion efficiency is improved, which is suitable for consumer electronics and industrial equipment.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching element and is widely used in power tools, household appliances and automation systems to ensure high-performance motor drive.
3. **LED drive circuit**: This MOSFET can provide stable current output in LED drive, which is suitable for various lighting applications, including commercial and home lighting solutions.
4. **Battery management system**: K3669-VB can be used for battery charging and management, helping to optimize the charging and discharging process, which is suitable for electric vehicles and renewable energy systems.
5. **Consumer electronics**: Its low on-resistance and high current carrying capacity make it an ideal choice for consumer electronic devices such as smartphones and tablets, ensuring efficient and stable power management.
K3669-VB has become an important part of modern electronic design due to its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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