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K3638-VB Product details
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K3638-VB Product Introduction
K3638-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 20V, suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the device is between 0.5V and 1.5V, ensuring efficient switching at lower gate-source voltages. The on-resistance (RDS(ON)) of K3638-VB is very low, at 6mΩ (@VGS=2.5V) and 4.5mΩ (@VGS=4.5V), and the maximum leakage current can reach 100A, ensuring its stable performance and low heat loss under high load conditions.
K3638-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its maximum drain-source voltage (VDS) is 20V, suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the device is between 0.5V and 1.5V, ensuring efficient switching at lower gate-source voltages. The on-resistance (RDS(ON)) of K3638-VB is very low, at 6mΩ (@VGS=2.5V) and 4.5mΩ (@VGS=4.5V), and the maximum leakage current can reach 100A, ensuring its stable performance and low heat loss under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K3638-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**: 6mΩ (@ VGS = 2.5V), 4.5mΩ (@ VGS = 4.5V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**: 6mΩ (@ VGS = 2.5V), 4.5mΩ (@ VGS = 4.5V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: K3638-VB is ideal for power management applications, including DC-DC converters and linear regulators, to effectively reduce energy loss and improve system efficiency.
2. **Motor drive**: In motor control, this MOSFET can be used as a switch in an H-bridge circuit, providing efficient current control, and is widely used in industrial equipment and consumer electronics.
3. **LED drive circuit**: K3638-VB is suitable for LED drive circuits, providing stable current output, ensuring the brightness and consistency of LEDs under high power conditions, and is suitable for commercial lighting and decorative purposes.
4. **Portable electronic devices**: Due to its low on-resistance and high current carrying capacity, this MOSFET is ideal for use in power management modules for portable electronic devices, ensuring long-term stable operation.
5. **Battery management system**: In battery management applications, K3638-VB can efficiently control the charging and discharging process to ensure battery safety, and is widely used in electric vehicles and renewable energy systems.
With its excellent electrical performance and wide range of applications, K3638-VB has become an important component in modern low-voltage power supply design.
1. **Power management**: K3638-VB is ideal for power management applications, including DC-DC converters and linear regulators, to effectively reduce energy loss and improve system efficiency.
2. **Motor drive**: In motor control, this MOSFET can be used as a switch in an H-bridge circuit, providing efficient current control, and is widely used in industrial equipment and consumer electronics.
3. **LED drive circuit**: K3638-VB is suitable for LED drive circuits, providing stable current output, ensuring the brightness and consistency of LEDs under high power conditions, and is suitable for commercial lighting and decorative purposes.
4. **Portable electronic devices**: Due to its low on-resistance and high current carrying capacity, this MOSFET is ideal for use in power management modules for portable electronic devices, ensuring long-term stable operation.
5. **Battery management system**: In battery management applications, K3638-VB can efficiently control the charging and discharging process to ensure battery safety, and is widely used in electric vehicles and renewable energy systems.
With its excellent electrical performance and wide range of applications, K3638-VB has become an important component in modern low-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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