K3633-VB Product details
Product introduction:
K3633-VB is a high voltage N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Utilizing SJ_Multi-EPI technology, the device provides stable conduction performance at a high voltage of 900V, making it ideal for high-efficiency power management and electrical equipment applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package type**: TO3P
- **Configuration**: Single-N-Channel
- **VDS**: 900V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 750mΩ @ VGS=10V
- **ID**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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