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K3473-VB Product details

Product introduction:

Product Introduction
K3473-VB is a high voltage single N-channel MOSFET in TO3P package, designed for applications requiring high voltage resistance and high reliability. Its excellent conduction performance and stability make it perform well in high voltage power management and switching circuits, suitable for various power electronic systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 900V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications: K3473-VB is widely used in high-voltage switching power supplies, inverters and industrial power systems, especially suitable for high-voltage power conversion equipment such as photovoltaic power generation, wind energy conversion and motor drive. Its high voltage resistance ensures stable operation in harsh environments and improves the overall reliability and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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