K3419-VB Product details
Product introduction:
K3419-VB is a high-efficiency single N-channel MOSFET in TO3P package, designed for high current and high-efficiency switching applications. With its extremely low on-resistance and high withstand voltage characteristics, this product performs well in power electronic systems and is very suitable for various high-load applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench
Domain and module applications:
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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