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K3419-VB Product details

Product introduction:

Product Introduction
K3419-VB is a high-efficiency single N-channel MOSFET in TO3P package, designed for high current and high-efficiency switching applications. With its extremely low on-resistance and high withstand voltage characteristics, this product performs well in power electronic systems and is very suitable for various high-load applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 60V 3V 210A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
Detailed parameter description
- **Package**: TO3P
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 210A
- **Technology**: Trench

Domain and module applications:

Applications: K3419-VB is widely used in high-power switching power supplies, inverters and motor drive systems, especially in power transmission and power management modules. Its high current carrying capacity and low on-resistance enable it to effectively improve efficiency, reduce heat generation and ensure system stability and reliability in various high-load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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