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K3367-Z-E1-AZ-VB Product details
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K3367-Z-E1-AZ-VB Product Introduction
K3367-Z-E1-AZ-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for electronic devices requiring miniaturization and high efficiency. The threshold voltage (Vth) of the device is 1.7V, which can operate normally at a lower gate-source voltage. The K3367-Z-E1-AZ-VB has excellent on-resistance of 9mΩ (@VGS=4.5V) and 7mΩ (@VGS=10V), respectively, and can carry up to 70A of leakage current, ensuring minimum energy loss in high-frequency switching operations.
K3367-Z-E1-AZ-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for electronic devices requiring miniaturization and high efficiency. The threshold voltage (Vth) of the device is 1.7V, which can operate normally at a lower gate-source voltage. The K3367-Z-E1-AZ-VB has excellent on-resistance of 9mΩ (@VGS=4.5V) and 7mΩ (@VGS=10V), respectively, and can carry up to 70A of leakage current, ensuring minimum energy loss in high-frequency switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K3367-Z-E1-AZ-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (@ VGS = 4.5V)
- 7mΩ (@ VGS = 10V)
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (@ VGS = 4.5V)
- 7mΩ (@ VGS = 10V)
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **High-efficiency switching power supply**: K3367-Z-E1-AZ-VB is very suitable for low-voltage high-efficiency switching power supply (SMPS). Due to its low on-resistance and high current capability, it can effectively reduce power consumption and improve system efficiency.
2. **LED driver**: In the LED driver circuit, this MOSFET can provide stable current control to ensure stable LED brightness, and is widely used in various lighting systems.
3. **Battery management system**: K3367-Z-E1-AZ-VB performs well in battery management systems, can efficiently manage the charging and discharging process, ensure the safe use of batteries, and improve battery performance and life.
4. **Small motor control**: In small motor drive applications, this MOSFET can be used as a switch in the H-bridge circuit to control the start and stop and speed regulation of the motor, which is suitable for consumer electronics and robotics.
5. **Power Management IC**: As a switching element in the power management integrated circuit, K3367-Z-E1-AZ-VB can efficiently switch the power path and is widely used in smart phones and portable devices.
K3367-Z-E1-AZ-VB has become an indispensable key component in modern electronic design due to its excellent performance and diverse applications.
1. **High-efficiency switching power supply**: K3367-Z-E1-AZ-VB is very suitable for low-voltage high-efficiency switching power supply (SMPS). Due to its low on-resistance and high current capability, it can effectively reduce power consumption and improve system efficiency.
2. **LED driver**: In the LED driver circuit, this MOSFET can provide stable current control to ensure stable LED brightness, and is widely used in various lighting systems.
3. **Battery management system**: K3367-Z-E1-AZ-VB performs well in battery management systems, can efficiently manage the charging and discharging process, ensure the safe use of batteries, and improve battery performance and life.
4. **Small motor control**: In small motor drive applications, this MOSFET can be used as a switch in the H-bridge circuit to control the start and stop and speed regulation of the motor, which is suitable for consumer electronics and robotics.
5. **Power Management IC**: As a switching element in the power management integrated circuit, K3367-Z-E1-AZ-VB can efficiently switch the power path and is widely used in smart phones and portable devices.
K3367-Z-E1-AZ-VB has become an indispensable key component in modern electronic design due to its excellent performance and diverse applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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