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K3310-VB Product details
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Product Introduction
K3310-VB is a high voltage N-channel MOSFET, packaged in TO220F, designed for 650V applications, with good conduction performance and stability, suitable for various power electronic equipment with high voltage requirements.
K3310-VB is a high voltage N-channel MOSFET, packaged in TO220F, designed for 650V applications, with good conduction performance and stability, suitable for various power electronic equipment with high voltage requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 680mΩ（VGS=10V）
- **Drain current (ID)**: 12A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 680mΩ（VGS=10V）
- **Drain current (ID)**: 12A
- **Technology**: Plannar
Domain and module applications：
Applications and modules: K3310-VB is widely used in power conversion, inverters, and high-voltage switching circuits. It is suitable for use in solar inverters, industrial power management, and high-voltage motor drive modules, especially in environments that require high voltage and high reliability. The low on-resistance and high voltage withstand capability of this MOSFET make it excellent in a variety of high-efficiency power electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
