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K3280-VB Product details
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Product Introduction
K3280-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for 30V applications, with extremely low on-resistance, suitable for high current environment, ensuring high performance and reliability.
K3280-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for 30V applications, with extremely low on-resistance, suitable for high current environment, ensuring high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**: 9mΩ (VGS=4.5V); 7mΩ (VGS=10V)
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**: 9mΩ (VGS=4.5V); 7mΩ (VGS=10V)
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and modules: K3280-VB is widely used in switching power supplies, DC-DC converters, motor drives and other fields. It performs well in consumer electronics, LED drivers and power management modules, and is particularly suitable for applications that require high efficiency and high current carrying capacity. The low on-resistance characteristics of this MOSFET enable it to reduce energy loss and improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
