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K3262-01MR-VB Product details
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K3262-01MR-VB Product Introduction
K3262-01MR-VB is a high-performance N-channel MOSFET packaged in TO220F. The device is designed for high voltage and high current applications, has excellent on-resistance characteristics, and is suitable for various power conversion and switching applications. Its operating voltage is up to 200V, making it widely used in industrial and consumer electronics.
K3262-01MR-VB is a high-performance N-channel MOSFET packaged in TO220F. The device is designed for high voltage and high current applications, has excellent on-resistance characteristics, and is suitable for various power conversion and switching applications. Its operating voltage is up to 200V, making it widely used in industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: K3262-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Model**: K3262-01MR-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
K3262-01MR-VB is widely used in the following fields and modules:
1. **Power management**: This MOSFET can be used in switching power supplies (SMPS). Due to its low on-resistance, it can effectively reduce power consumption and improve energy efficiency, and is suitable for high-efficiency power conversion modules.
2. **Motor drive**: In motor control and drive circuits, K3262-01MR-VB can be used as a switching element to provide high current support to ensure the stability of the motor during startup and operation.
3. **Battery management system**: During battery charging and discharging, this MOSFET can achieve efficient switching control to ensure the safety and efficiency of battery use, especially suitable for electric vehicles and renewable energy applications.
4. **LED drive circuit**: K3262-01MR-VB is suitable for LED drive circuits, which can effectively control the switching of LEDs and optimize the brightness and energy consumption performance of lamps.
Through these applications, it can be seen that K3262-01MR-VB plays a vital role in modern electronic products, meeting the needs of high performance and high reliability.
K3262-01MR-VB is widely used in the following fields and modules:
1. **Power management**: This MOSFET can be used in switching power supplies (SMPS). Due to its low on-resistance, it can effectively reduce power consumption and improve energy efficiency, and is suitable for high-efficiency power conversion modules.
2. **Motor drive**: In motor control and drive circuits, K3262-01MR-VB can be used as a switching element to provide high current support to ensure the stability of the motor during startup and operation.
3. **Battery management system**: During battery charging and discharging, this MOSFET can achieve efficient switching control to ensure the safety and efficiency of battery use, especially suitable for electric vehicles and renewable energy applications.
4. **LED drive circuit**: K3262-01MR-VB is suitable for LED drive circuits, which can effectively control the switching of LEDs and optimize the brightness and energy consumption performance of lamps.
Through these applications, it can be seen that K3262-01MR-VB plays a vital role in modern electronic products, meeting the needs of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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