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K3163-VB Product details
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1. Product Introduction
K3163-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-current, high-efficiency applications. Its drain-source voltage (VDS) is 60V and the maximum drain current (ID) can reach 210A, which is suitable for systems that need to handle high power and high current. The gate voltage (VGS) range is ±20V, the threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is excellent, which is 3.6mΩ at VGS=4.5V and as low as 3mΩ at VGS=10V. This extremely low on-resistance reduces conduction losses and ensures its efficient performance in high-power applications, especially for power management and electric systems.
K3163-VB is a high-performance single N-channel MOSFET in TO3P package, designed for high-current, high-efficiency applications. Its drain-source voltage (VDS) is 60V and the maximum drain current (ID) can reach 210A, which is suitable for systems that need to handle high power and high current. The gate voltage (VGS) range is ±20V, the threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is excellent, which is 3.6mΩ at VGS=4.5V and as low as 3mΩ at VGS=10V. This extremely low on-resistance reduces conduction losses and ensures its efficient performance in high-power applications, especially for power management and electric systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology type**: Trench
- **Operating temperature range**: -55°C ~ 150°C
- **Typical application frequency**: high frequency application
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology type**: Trench
- **Operating temperature range**: -55°C ~ 150°C
- **Typical application frequency**: high frequency application
Domain and module applications：
3. Application fields and module examples
1. **Power management system**: K3163-VB performs well in switching power supplies, especially in DC-DC converters, where the device can handle large currents and reduce power losses. Its extremely low on-resistance ensures efficient power transmission, making it suitable for power management modules in high-performance servers and telecommunications equipment.
2. **Electric vehicle drive**: This MOSFET is very suitable for battery management systems and motor control modules in electric vehicles, especially in drives that need to handle high currents. It can ensure efficient energy transfer between batteries and motors, improving vehicle range and responsiveness.
3. **Photovoltaic inverter**: In the inverter of a solar power generation system, K3163-VB is used to efficiently convert DC power to AC power. Its low on-resistance characteristics can reduce conversion losses and improve the overall efficiency of photovoltaic power generation.
4. **High-power motor control**: This device can be used for high-power motor control in the industrial field. While providing high current output, it ensures smooth motor start-up and efficient operation. It is suitable for key control modules in mechanical manufacturing and automation equipment.
In these applications, K3163-VB demonstrates extremely high reliability and efficiency with its low on-resistance and high current carrying capacity, and is an indispensable device in modern high-power circuits.
1. **Power management system**: K3163-VB performs well in switching power supplies, especially in DC-DC converters, where the device can handle large currents and reduce power losses. Its extremely low on-resistance ensures efficient power transmission, making it suitable for power management modules in high-performance servers and telecommunications equipment.
2. **Electric vehicle drive**: This MOSFET is very suitable for battery management systems and motor control modules in electric vehicles, especially in drives that need to handle high currents. It can ensure efficient energy transfer between batteries and motors, improving vehicle range and responsiveness.
3. **Photovoltaic inverter**: In the inverter of a solar power generation system, K3163-VB is used to efficiently convert DC power to AC power. Its low on-resistance characteristics can reduce conversion losses and improve the overall efficiency of photovoltaic power generation.
4. **High-power motor control**: This device can be used for high-power motor control in the industrial field. While providing high current output, it ensures smooth motor start-up and efficient operation. It is suitable for key control modules in mechanical manufacturing and automation equipment.
In these applications, K3163-VB demonstrates extremely high reliability and efficiency with its low on-resistance and high current carrying capacity, and is an indispensable device in modern high-power circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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