K3162-VB Product details
Product introduction:
K3162-VB is a high-voltage, single N-channel MOSFET in a TO220F package, suitable for a variety of high-power applications. Its design is based on Trench technology, providing low on-resistance and efficient current management. The device has a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, supporting high-voltage switching applications. The threshold voltage (Vth) is 3V, ensuring good conduction characteristics. Its on-resistance (RDS(ON)) is 38mΩ at a gate-source voltage of 10V, supporting a drain current of up to 45A, which is particularly suitable for the needs of high-efficiency, high-power density circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | 38mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: K3162-VB
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: TO220F provides better heat dissipation performance, suitable for high current applications
Domain and module applications:
K3162-VB MOSFET is widely used in the following fields and modules due to its high voltage and high current capabilities:
1. **Photovoltaic inverter**: In solar energy systems, K3162-VB is used as a switching element in photovoltaic inverters, processing high-voltage DC power and converting it into AC power, supporting the efficient use of renewable energy.
2. **Uninterruptible power supply (UPS)**: This MOSFET plays a key switching role in UPS systems, managing the charging and discharging of high-voltage batteries to ensure continuous power supply and protection of equipment during power outages.
3. **Industrial motor drive**: In industrial automation equipment, K3162-VB is often used in motor drive circuits, handling large currents and providing stable high-voltage control, improving the efficiency and reliability of motor operation.
4. **Switch Mode Power Supply (SMPS)**: In high-efficiency power conversion modules, the K3162-VB provides excellent power handling capabilities, especially suitable for servers, communication equipment and other applications that require efficient energy conversion.
5. **Electric Vehicle Battery Management**: The K3162-VB can be applied to the battery management system of electric and hybrid vehicles to control the high current and high voltage during battery charging and discharging to improve the vehicle's endurance and charging efficiency.
Through these application examples, the K3162-VB demonstrates its excellent performance in high voltage and high current environments, suitable for a variety of demanding power electronics application scenarios.
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