K3150-VB Product details
Product introduction:
K3150-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and the gate-source voltage (VGS) can reach ±20V, making it excellent in a variety of power management and switching applications. Its threshold voltage (Vth) is 1.8V, and it can turn on quickly at a lower gate-source voltage. The on-resistance (RDS(ON)) of K3150-VB is 35mΩ and 30mΩ at gate-source voltages of 4.5V and 10V respectively, ensuring low energy loss under high current conditions. The maximum drain current (ID) can reach 40A, which is particularly suitable for high-efficiency and high-density circuit design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: K3150-VB
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: With excellent switching characteristics, suitable for high frequency applications
Domain and module applications:
The excellent performance of K3150-VB makes it widely used in many fields. The following are some specific application examples:
1. **Power converter**: In DC-DC converters and AC-DC adapters, K3150-VB can be used for high-efficiency power conversion and is widely used in computer power supplies, communication equipment, etc. to improve energy efficiency and system stability.
2. **Electric vehicle charging station**: In the charging system of electric vehicles, K3150-VB can be used as a switching element to optimize the current management during the charging process, ensure charging efficiency and safety, and meet the needs of fast charging.
3. **Industrial control system**: In industrial automation equipment, K3150-VB is widely used in motor control and servo drive systems to achieve precise speed and torque control and improve production efficiency.
4. **LED lighting driver**: This MOSFET is suitable for high-power LED lighting applications, as a switching element for current control to improve the accuracy of brightness adjustment and the energy efficiency of LED.
5. **Consumer electronics**: In consumer electronic devices such as smartphones and tablets, K3150-VB is used in power management circuits to optimize battery performance, extend the use time of the device, and meet the growing needs of users.
Through the above application examples, K3150-VB demonstrates its excellent performance and wide applicability, and is an important component of modern power management and switching circuit design.
Technical support:
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