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K3134-VB Product details
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K3134-VB Product Introduction
K3134-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. The device has a maximum drain-source voltage (VDS) of 30V, suitable for a wide range of electronic devices. Its gate-source voltage (VGS) limit is ±20V, making it well adaptable in a variety of applications. The threshold voltage (Vth) of K3134-VB is 1.7V, ensuring fast turn-on and turn-off, improving system response speed. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, showing extremely low energy loss and enabling it to have excellent current carrying capacity under the condition of maximum continuous current (ID) of up to 100A. K3134-VB adopts advanced Trench technology, with excellent thermal performance and high efficiency, making it outstanding in various applications.
K3134-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. The device has a maximum drain-source voltage (VDS) of 30V, suitable for a wide range of electronic devices. Its gate-source voltage (VGS) limit is ±20V, making it well adaptable in a variety of applications. The threshold voltage (Vth) of K3134-VB is 1.7V, ensuring fast turn-on and turn-off, improving system response speed. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, showing extremely low energy loss and enabling it to have excellent current carrying capacity under the condition of maximum continuous current (ID) of up to 100A. K3134-VB adopts advanced Trench technology, with excellent thermal performance and high efficiency, making it outstanding in various applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
K3134-VB Detailed parameter description
| Parameter| Description|
|---------------------|------------------------|
| Model| K3134-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 3mΩ @ VGS=4.5V |
| | 2mΩ @ VGS=10V |
| Maximum continuous current (ID) | 100A |
| Technology| Trench |
| Parameter| Description|
|---------------------|------------------------|
| Model| K3134-VB |
| Package| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 3mΩ @ VGS=4.5V |
| | 2mΩ @ VGS=10V |
| Maximum continuous current (ID) | 100A |
| Technology| Trench |
Domain and module applications：
Applications and module examples
1. **Power management**: The K3134-VB is ideal for efficient switch mode power supply (SMPS) designs that can operate under high load conditions and ensure minimal energy loss, thereby improving the overall efficiency of the system.
2. **Electric vehicles**: In the drive circuit of electric vehicles, the K3134-VB can be used as a motor control switch with high current handling capabilities to ensure the reliability and responsiveness of the drive system.
3. **LED driving**: This MOSFET can be used for dimming and switching control in LED lighting applications, taking advantage of its low on-resistance characteristics to optimize energy usage and extend the life of LED components.
4. **Portable devices**: The K3134-VB is suitable for power management modules in various consumer electronic products, such as smartphones, tablets, and chargers, providing efficient charging and energy management solutions.
In summary, the K3134-VB is an excellently designed MOSFET that is widely used in power management, electric vehicles, LED drivers, and consumer electronics, demonstrating its important value in modern electronic devices.
1. **Power management**: The K3134-VB is ideal for efficient switch mode power supply (SMPS) designs that can operate under high load conditions and ensure minimal energy loss, thereby improving the overall efficiency of the system.
2. **Electric vehicles**: In the drive circuit of electric vehicles, the K3134-VB can be used as a motor control switch with high current handling capabilities to ensure the reliability and responsiveness of the drive system.
3. **LED driving**: This MOSFET can be used for dimming and switching control in LED lighting applications, taking advantage of its low on-resistance characteristics to optimize energy usage and extend the life of LED components.
4. **Portable devices**: The K3134-VB is suitable for power management modules in various consumer electronic products, such as smartphones, tablets, and chargers, providing efficient charging and energy management solutions.
In summary, the K3134-VB is an excellently designed MOSFET that is widely used in power management, electric vehicles, LED drivers, and consumer electronics, demonstrating its important value in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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