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K3132-VB Product details
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1. K3132-VB Product Introduction
K3132-VB is a high voltage single N-channel MOSFET with a TO3P package and a drain-source voltage (VDS) of 600V, suitable for various high-voltage power applications. The gate-source voltage (VGS) of the device is ±30V, making it flexible and compatible in control circuits. The gate threshold voltage (Vth) of K3132-VB is 3.5V, ensuring that it can be turned on normally at a relatively low drive voltage. The on-resistance of the device (RDS(ON) is 60mΩ@VGS=10V) excels in reducing conduction losses and is suitable for efficient power management, converters and other high-power applications. The SJ_Multi-EPI technology it uses further improves the performance and reliability of the device.
K3132-VB is a high voltage single N-channel MOSFET with a TO3P package and a drain-source voltage (VDS) of 600V, suitable for various high-voltage power applications. The gate-source voltage (VGS) of the device is ±30V, making it flexible and compatible in control circuits. The gate threshold voltage (Vth) of K3132-VB is 3.5V, ensuring that it can be turned on normally at a relatively low drive voltage. The on-resistance of the device (RDS(ON) is 60mΩ@VGS=10V) excels in reducing conduction losses and is suitable for efficient power management, converters and other high-power applications. The SJ_Multi-EPI technology it uses further improves the performance and reliability of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description of K3132-VB
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Suitable for fast switching applications
- **Power consumption**: Design optimized to reduce power consumption and improve energy efficiency
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Suitable for fast switching applications
- **Power consumption**: Design optimized to reduce power consumption and improve energy efficiency
Domain and module applications：
3. K3132-VB applicable fields and modules
K3132-VB is suitable for many fields due to its high voltage and low on-resistance. The following are some typical application scenarios:
1. **High-voltage switching power supply**: K3132-VB can be used as the main switching element in the switching power supply, supporting the efficient conversion of high-voltage power supply, and is widely used in industrial power supply and power conversion equipment.
2. **Motor drive**: This MOSFET is suitable for high-voltage motor controllers such as electric vehicles and industrial drive systems, and can provide reliable high-current drive to ensure stable operation of the motor.
3. **Inverter**: In inverter applications, K3132-VB can switch efficiently in high-voltage environments, control the speed and torque of the motor, and improve the overall energy efficiency of the system.
4. **Battery management system**: This device can be used in high-voltage battery management systems to ensure safe charging and discharging processes, improve battery life and performance, and is particularly suitable for electric vehicles and energy storage systems.
5. **Renewable energy system**: In solar inverters and wind power generation systems, K3132-VB can be used for efficient power conversion and management, supporting the integration and utilization of renewable energy and adapting to changes in modern energy structure.
K3132-VB is suitable for many fields due to its high voltage and low on-resistance. The following are some typical application scenarios:
1. **High-voltage switching power supply**: K3132-VB can be used as the main switching element in the switching power supply, supporting the efficient conversion of high-voltage power supply, and is widely used in industrial power supply and power conversion equipment.
2. **Motor drive**: This MOSFET is suitable for high-voltage motor controllers such as electric vehicles and industrial drive systems, and can provide reliable high-current drive to ensure stable operation of the motor.
3. **Inverter**: In inverter applications, K3132-VB can switch efficiently in high-voltage environments, control the speed and torque of the motor, and improve the overall energy efficiency of the system.
4. **Battery management system**: This device can be used in high-voltage battery management systems to ensure safe charging and discharging processes, improve battery life and performance, and is particularly suitable for electric vehicles and energy storage systems.
5. **Renewable energy system**: In solar inverters and wind power generation systems, K3132-VB can be used for efficient power conversion and management, supporting the integration and utilization of renewable energy and adapting to changes in modern energy structure.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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