K3122-VB Product details
Product introduction:
K3122-VB is a high-performance single N-channel MOSFET designed in SOT89 package, designed for miniaturization and high-efficiency power management. Its maximum drain-source voltage (VDS) is 30V, and the gate-source voltage (VGS) can reach ±20V. The threshold voltage (Vth) of K3122-VB is 1.7V, ensuring that it turns on quickly at low voltage. The on-resistance (RDS(ON)) is 30mΩ and 22mΩ at gate-source voltages of 2.5V and 4.5V respectively. The low on-resistance helps achieve high efficiency under high current conditions. The maximum drain current (ID) can reach 6.8A, which is suitable for power management and switching applications of various small electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Model**: K3122-VB
- **Package type**: SOT89
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Fast switching characteristics, suitable for high frequency applications
Domain and module applications:
The excellent performance of K3122-VB makes it widely used in many fields. The following are some specific application examples:
1. **Mobile device power management**: In portable devices such as smartphones and tablets, K3122-VB is used in power management circuits, which can effectively improve the energy conversion efficiency of the battery and extend the battery life of the device.
2. **LED drive circuit**: In LED lighting and backlight applications, this MOSFET can be used as an efficient switch to help achieve precise brightness adjustment and longer service life, meeting the efficiency and environmental protection requirements of modern lighting design.
3. **Battery management system**: In battery charging and protection circuits, K3122-VB can be used for power switching to ensure the safety and efficiency of the battery during charging and discharging, and improve the overall performance of the battery.
4. **Small power adapter**: In AC-DC converters and DC-DC regulated power supplies, K3122-VB significantly improves conversion efficiency and reduces energy loss with its low on-resistance characteristics, and is widely used in various power adapters.
5. **Consumer electronics**: In home appliances, game consoles and other consumer electronics, K3122-VB can be used for power switches and signal switches to meet the market demand for efficient and miniaturized electronic products.
Through the above application examples, K3122-VB has demonstrated its excellent performance and wide applicability, becoming an important part of efficient power management and switching circuit design.
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