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K3101-VB Product details
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K3101-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 550V, and the gate-source voltage (VGS) can reach ±30V, which is very suitable for various applications in the industrial and power electronics fields. The turn-on threshold voltage (Vth) of K3101-VB is 3V. It can be turned on quickly under appropriate gate voltage, has a low on-resistance (RDS(ON)) of 260mΩ @ VGS = 10V, and can handle a maximum drain current (ID) of 18A. This MOSFET uses Plannar technology to ensure good thermal performance and reliability, and is suitable for high voltage power supplies and switching applications.
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K3101-VB is a high voltage single N-channel MOSFET in TO220F package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) is 550V, and the gate-source voltage (VGS) can reach ±30V, which is very suitable for various applications in the industrial and power electronics fields. The turn-on threshold voltage (Vth) of K3101-VB is 3V. It can be turned on quickly under appropriate gate voltage, has a low on-resistance (RDS(ON)) of 260mΩ @ VGS = 10V, and can handle a maximum drain current (ID) of 18A. This MOSFET uses Plannar technology to ensure good thermal performance and reliability, and is suitable for high voltage power supplies and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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Package type: TO220F
Configuration: Single N-channel
Drain-source voltage (VDS): 550V
Gate-source voltage (VGS): ±30V
Turn-on threshold voltage (Vth): 3V
On-resistance (RDS(ON)): 260mΩ @ VGS = 10V
Maximum drain current (ID): 18A
Technology: Plannar
III.
Package type: TO220F
Configuration: Single N-channel
Drain-source voltage (VDS): 550V
Gate-source voltage (VGS): ±30V
Turn-on threshold voltage (Vth): 3V
On-resistance (RDS(ON)): 260mΩ @ VGS = 10V
Maximum drain current (ID): 18A
Technology: Plannar
III.
Domain and module applications：
Switching Power Supplies: The K3101-VB can be used in switching power supply (SMPS) designs, and is particularly suitable for achieving high-efficiency power conversion in situations where high voltage and medium current are required.
Inverters: In solar and wind power inverters, this MOSFET can be used to efficiently convert DC to AC, supporting renewable energy applications.
Electric Vehicle Charging Systems: The K3101-VB can be used in electric vehicle charging devices to handle high voltage and high current requirements, ensuring the safety and reliability of the charging process.
Power Electronics: In various industrial power management systems, this MOSFET is suitable for motor drives and other high-voltage switching applications to improve the overall performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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