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K3076L-VB Product details

Product introduction:

1. K3076L-VB Product Introduction

K3076L-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high performance and high reliability. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) range of ±30V, the device can meet the needs of a variety of high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable switching operation under appropriate control signals. K3076L-VB has a relatively low on-resistance (RDS(ON) is 700mΩ@VGS=10V), which can reduce power consumption and optimize thermal management in the on state. With SJ_Multi-EPI technology, this MOSFET can operate stably in harsh environments and is widely used in industrial control, power management and high-voltage switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 7A 700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description of K3076L-VB

- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Suitable for high-frequency switching applications
- **Power consumption**: Optimized design to reduce power consumption and improve efficiency

Domain and module applications:

3. K3076L-VB applicable fields and modules

K3076L-VB is widely used in many fields and modules due to its high voltage tolerance and excellent performance. The following are some typical application scenarios:

1. **High-voltage power management**: In various high-voltage DC-DC converters, K3076L-VB is used as a switching element to achieve high-efficiency power conversion, especially suitable for high-voltage power management in industrial power supplies and communication equipment.

2. **Inverter and power conversion**: This MOSFET is widely used in inverter circuits, such as solar inverters and wind power generation systems, and can operate stably under high voltage conditions to improve power conversion efficiency.

3. **LED driver**: In LED lighting applications, K3076L-VB can be used as a switch to drive high-power LEDs, helping to reduce energy consumption and extend the service life of LEDs.

4. **Electric Vehicle**: In the power management system of electric vehicles, this device is suitable for battery management and motor drive, and can withstand high voltage and high current, improving the overall performance of the system.

5. **High-frequency switching power supply**: K3076L-VB is suitable for various high-frequency switching power supplies (such as adapters and chargers), and through its low on-resistance and high switching speed, it helps to improve power conversion efficiency and reduce heat.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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