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K3032-VB Product details
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K3032-VB MOSFET Product Introduction
The K3032-VB is a high-performance single N-channel power MOSFET in a TO252 package, designed to withstand drain-source voltages (VDS) up to 100V. The device has a maximum drain current (ID) of up to 40A, suitable for a variety of power supply and power management applications. The gate-source voltage (VGS) of the K3032-VB can be up to ±20V, ensuring stability under a variety of operating conditions. Its on-resistance (RDS(ON)) is 30mΩ at a gate voltage of 10V and 35mΩ at 4.5V, making it an excellent performer in applications such as switching power supplies and DC motor drives, and can effectively reduce power consumption and heat generation.
The K3032-VB is a high-performance single N-channel power MOSFET in a TO252 package, designed to withstand drain-source voltages (VDS) up to 100V. The device has a maximum drain current (ID) of up to 40A, suitable for a variety of power supply and power management applications. The gate-source voltage (VGS) of the K3032-VB can be up to ±20V, ensuring stability under a variety of operating conditions. Its on-resistance (RDS(ON)) is 30mΩ at a gate voltage of 10V and 35mΩ at 4.5V, making it an excellent performer in applications such as switching power supplies and DC motor drives, and can effectively reduce power consumption and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Designed for high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Designed for high power applications.
Domain and module applications：
Applications and modules
1. **Switching power supply**:
K3032-VB is very suitable for use in **switching power supply** (SMPS). Its high withstand voltage of up to 100V and low RDS(ON) value can effectively improve power conversion efficiency, reduce energy loss, and thus improve overall system performance.
2. **Motor drive**:
In **motor drive** applications, this MOSFET can be used for the control and drive of DC motors. Due to its high drain current capability, it can meet the requirements of various motor starting and running, ensuring smooth motor operation.
3. **LED drive circuit**:
K3032-VB has a wide range of applications in **LED drive circuit**, suitable for occasions requiring efficient switching and dimming. Its low on-resistance makes the drive current stable, thereby improving the brightness of the LED and extending its service life.
4. **Battery Management System**:
This MOSFET can also be used in **Battery Management System** for battery charge and discharge control and protection. Its stable switching characteristics and high withstand voltage characteristics enable it to perform well in various charging and discharging modes, ensuring system safety and efficiency.
With the above features, K3032-VB MOSFET is an ideal choice for power management and power control applications, meeting high performance and reliability requirements, and providing engineers with great design flexibility.
1. **Switching power supply**:
K3032-VB is very suitable for use in **switching power supply** (SMPS). Its high withstand voltage of up to 100V and low RDS(ON) value can effectively improve power conversion efficiency, reduce energy loss, and thus improve overall system performance.
2. **Motor drive**:
In **motor drive** applications, this MOSFET can be used for the control and drive of DC motors. Due to its high drain current capability, it can meet the requirements of various motor starting and running, ensuring smooth motor operation.
3. **LED drive circuit**:
K3032-VB has a wide range of applications in **LED drive circuit**, suitable for occasions requiring efficient switching and dimming. Its low on-resistance makes the drive current stable, thereby improving the brightness of the LED and extending its service life.
4. **Battery Management System**:
This MOSFET can also be used in **Battery Management System** for battery charge and discharge control and protection. Its stable switching characteristics and high withstand voltage characteristics enable it to perform well in various charging and discharging modes, ensuring system safety and efficiency.
With the above features, K3032-VB MOSFET is an ideal choice for power management and power control applications, meeting high performance and reliability requirements, and providing engineers with great design flexibility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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