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K3026-VB Product details
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K3026-VB Product Introduction
K3026-VB is a high-performance N-channel MOSFET in TO220F package, designed for high current applications. Its drain-source voltage (VDS) can reach 60V, suitable for use in medium voltage environments. The gate-source voltage (VGS) range is ±20V, which can adapt to a variety of drive circuit configurations. The threshold voltage (Vth) of this MOSFET is 2.5V, which enables it to achieve switching operation at a lower gate voltage and has good conduction characteristics. The on-resistance (RDS(ON)) of K3026-VB is 10mΩ at VGS=10V and 12mΩ at VGS=4.5V. The extremely low on-resistance ensures high efficiency at high currents, and the maximum continuous current (ID) reaches 70A, which is suitable for a variety of high-power applications. The Trench technology it uses further improves the switching speed and conductivity performance, ensuring reliability in dynamic applications.
K3026-VB is a high-performance N-channel MOSFET in TO220F package, designed for high current applications. Its drain-source voltage (VDS) can reach 60V, suitable for use in medium voltage environments. The gate-source voltage (VGS) range is ±20V, which can adapt to a variety of drive circuit configurations. The threshold voltage (Vth) of this MOSFET is 2.5V, which enables it to achieve switching operation at a lower gate voltage and has good conduction characteristics. The on-resistance (RDS(ON)) of K3026-VB is 10mΩ at VGS=10V and 12mΩ at VGS=4.5V. The extremely low on-resistance ensures high efficiency at high currents, and the maximum continuous current (ID) reaches 70A, which is suitable for a variety of high-power applications. The Trench technology it uses further improves the switching speed and conductivity performance, ensuring reliability in dynamic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 2.5V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
K3026-VB Detailed parameter description
| Parameter| Description|
|---------------------|------------------------|
| Model| K3026-VB |
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 12mΩ @ VGS=4.5V |
| | 10mΩ @ VGS=10V |
| Maximum continuous current (ID) | 70A |
| Technology| Trench |
| Parameter| Description|
|---------------------|------------------------|
| Model| K3026-VB |
| Package| TO220F |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 12mΩ @ VGS=4.5V |
| | 10mΩ @ VGS=10V |
| Maximum continuous current (ID) | 70A |
| Technology| Trench |
Domain and module applications：
Applications and module examples
1. **Power management system**: K3026-VB is widely used in power management modules, especially as a switching element, which can effectively control the output current and improve the energy efficiency of the system. It is suitable for applications such as switching power supplies and DC-DC converters.
2. **Motor drive**: This MOSFET can be used in motor control systems, especially medium-power motor drives, such as fans and pumps, to provide stable performance under high current conditions to ensure the reliability of motor start and operation.
3. **Battery management system**: K3026-VB is suitable for battery chargers and management systems, which can achieve efficient charging control, especially in applications that require fast charging, to ensure that the battery operates within a safe range.
4. **Lighting and LED driver**: This MOSFET is also suitable for efficient lighting control systems, which can control high-power LED lighting and improve the overall energy efficiency and performance of lighting systems.
In summary, K3026-VB is a MOSFET with excellent performance. It can perform well in high current and medium voltage applications and is suitable for various needs of modern power supplies and drive systems.
1. **Power management system**: K3026-VB is widely used in power management modules, especially as a switching element, which can effectively control the output current and improve the energy efficiency of the system. It is suitable for applications such as switching power supplies and DC-DC converters.
2. **Motor drive**: This MOSFET can be used in motor control systems, especially medium-power motor drives, such as fans and pumps, to provide stable performance under high current conditions to ensure the reliability of motor start and operation.
3. **Battery management system**: K3026-VB is suitable for battery chargers and management systems, which can achieve efficient charging control, especially in applications that require fast charging, to ensure that the battery operates within a safe range.
4. **Lighting and LED driver**: This MOSFET is also suitable for efficient lighting control systems, which can control high-power LED lighting and improve the overall energy efficiency and performance of lighting systems.
In summary, K3026-VB is a MOSFET with excellent performance. It can perform well in high current and medium voltage applications and is suitable for various needs of modern power supplies and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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