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K2A65DA4-VB Product details
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K2A65DA4-VB MOSFET Product Introduction
The K2A65DA4-VB is a high voltage single N-channel power MOSFET in a TO220F package, designed for applications requiring up to 650V. Its maximum drain current (ID) can reach 4A, suitable for a variety of high voltage environments. The gate-source voltage (VGS) of this MOSFET can withstand ±30V, ensuring stability under different operating conditions. The on-resistance (RDS(ON)) of the K2A65DA4-VB is 2560mΩ at a gate voltage of 10V, which enables it to still have reasonable power loss performance under high voltage conditions, suitable for use in applications with strict electrical performance requirements.
The K2A65DA4-VB is a high voltage single N-channel power MOSFET in a TO220F package, designed for applications requiring up to 650V. Its maximum drain current (ID) can reach 4A, suitable for a variety of high voltage environments. The gate-source voltage (VGS) of this MOSFET can withstand ±30V, ensuring stability under different operating conditions. The on-resistance (RDS(ON)) of the K2A65DA4-VB is 2560mΩ at a gate voltage of 10V, which enables it to still have reasonable power loss performance under high voltage conditions, suitable for use in applications with strict electrical performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Optimized design for high power applications.
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2560mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Optimized design for high power applications.
Domain and module applications：
Applications and modules
1. **High voltage power converter**:
K2A65DA4-VB is widely used in **high voltage power converter**. Its 650V withstand voltage capability enables it to handle high voltage input and is suitable for power modules such as AC-DC converters and DC-DC converters.
2. **Motor control**:
This MOSFET can be used in **motor control** circuits, especially in applications that require high voltage drive, such as industrial motors and household appliances. Its good switching characteristics and high withstand voltage give it good stability when controlling high-power motors.
3. **Power amplifier**:
In **power amplifier** design, K2A65DA4-VB can be used in audio amplifier and RF amplifier circuits. Its high voltage and moderate current capability can meet the power requirements of high-performance amplifiers and ensure the quality of sound quality and signal transmission.
4. **Lighting equipment**:
This MOSFET is suitable for switching applications in **lighting equipment**, such as LED driver circuits. Due to its good conduction characteristics, it can efficiently control the switching state of lighting equipment to achieve energy saving and efficient lighting.
With the above characteristics, K2A65DA4-VB MOSFET can provide stable and efficient performance in a variety of high-voltage applications, becoming a reliable choice for designers and engineers.
1. **High voltage power converter**:
K2A65DA4-VB is widely used in **high voltage power converter**. Its 650V withstand voltage capability enables it to handle high voltage input and is suitable for power modules such as AC-DC converters and DC-DC converters.
2. **Motor control**:
This MOSFET can be used in **motor control** circuits, especially in applications that require high voltage drive, such as industrial motors and household appliances. Its good switching characteristics and high withstand voltage give it good stability when controlling high-power motors.
3. **Power amplifier**:
In **power amplifier** design, K2A65DA4-VB can be used in audio amplifier and RF amplifier circuits. Its high voltage and moderate current capability can meet the power requirements of high-performance amplifiers and ensure the quality of sound quality and signal transmission.
4. **Lighting equipment**:
This MOSFET is suitable for switching applications in **lighting equipment**, such as LED driver circuits. Due to its good conduction characteristics, it can efficiently control the switching state of lighting equipment to achieve energy saving and efficient lighting.
With the above characteristics, K2A65DA4-VB MOSFET can provide stable and efficient performance in a variety of high-voltage applications, becoming a reliable choice for designers and engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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