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K2982-Z-VB Product details
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K2982-Z-VB MOSFET Product Introduction
The K2982-Z-VB is a high-performance single N-channel power MOSFET designed in a TO252 package, developed specifically for low-voltage, high-current applications. The device has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 80A, making it suitable for use in environments with strict electrical conditions. The K2982-Z-VB has an on-resistance (RDS(ON)) of only 5mΩ at a gate voltage of 10V, ensuring excellent energy efficiency and low power consumption, making it ideal for a variety of power management and switching applications.
The K2982-Z-VB is a high-performance single N-channel power MOSFET designed in a TO252 package, developed specifically for low-voltage, high-current applications. The device has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 80A, making it suitable for use in environments with strict electrical conditions. The K2982-Z-VB has an on-resistance (RDS(ON)) of only 5mΩ at a gate voltage of 10V, ensuring excellent energy efficiency and low power consumption, making it ideal for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Optimized design for high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Thermal resistance (RθJA)**: Optimized design for high power applications.
Domain and module applications：
Applications and Modules
1. **Power Management**:
K2982-Z-VB is widely used in **power management**, especially in DC-DC converters. Its low on-resistance characteristics enable it to provide stable current output while reducing power consumption, meeting the high-efficiency power supply requirements of various electronic devices.
2. **Motor Drive**:
This MOSFET is very suitable for **motor drive** applications, such as drive circuits for DC motors and stepper motors. Its high current handling capability and fast switching characteristics make it reliable and efficient in industrial automation and robotics.
3. **Switching Application**:
K2982-Z-VB can also be used in **switching applications**, and performs well in switching power supplies and conversion circuits. Its fast response time and low conduction loss make it an ideal choice for high-frequency switching circuits, helping to improve the overall efficiency of the circuit.
4. **Consumer electronics**:
In **consumer electronics**, such as smartphones, tablets, etc., K2982-Z-VB can be used for power management and signal amplification, providing efficient and stable performance. This is essential for modern electronic products that pursue portability and high performance.
1. **Power Management**:
K2982-Z-VB is widely used in **power management**, especially in DC-DC converters. Its low on-resistance characteristics enable it to provide stable current output while reducing power consumption, meeting the high-efficiency power supply requirements of various electronic devices.
2. **Motor Drive**:
This MOSFET is very suitable for **motor drive** applications, such as drive circuits for DC motors and stepper motors. Its high current handling capability and fast switching characteristics make it reliable and efficient in industrial automation and robotics.
3. **Switching Application**:
K2982-Z-VB can also be used in **switching applications**, and performs well in switching power supplies and conversion circuits. Its fast response time and low conduction loss make it an ideal choice for high-frequency switching circuits, helping to improve the overall efficiency of the circuit.
4. **Consumer electronics**:
In **consumer electronics**, such as smartphones, tablets, etc., K2982-Z-VB can be used for power management and signal amplification, providing efficient and stable performance. This is essential for modern electronic products that pursue portability and high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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