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K2955-VB Product details
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Product Introduction: K2955-VB MOSFET
K2955-VB is a high-performance single N-channel power MOSFET designed in TO3P package and optimized for high-power applications. Its maximum drain-source voltage (VDS) can reach 60V, and the drain current (ID) can reach up to 210A, which is suitable for operation under high load conditions. The device has a turn-on threshold voltage (Vth) of 3V, which enables fast turn-on at a relatively low gate voltage. Its on-resistance (RDS(ON)) is 3mΩ at VGS=10V, showing extremely low conduction losses, thereby effectively reducing heat generation and improving overall system efficiency. This makes K2955-VB particularly suitable for applications requiring high power and high efficiency.
K2955-VB is a high-performance single N-channel power MOSFET designed in TO3P package and optimized for high-power applications. Its maximum drain-source voltage (VDS) can reach 60V, and the drain current (ID) can reach up to 210A, which is suitable for operation under high load conditions. The device has a turn-on threshold voltage (Vth) of 3V, which enables fast turn-on at a relatively low gate voltage. Its on-resistance (RDS(ON)) is 3mΩ at VGS=10V, showing extremely low conduction losses, thereby effectively reducing heat generation and improving overall system efficiency. This makes K2955-VB particularly suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Parameter Description:
- **Package**: TO3P
- **Channel Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Turn-On Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 3.6mΩ@VGS=4.5V
- 3mΩ@VGS=10V
- **Drain Current (ID)**: 210A
- **Technology**: Trench Technology
- **Maximum Power Dissipation**: Typically 75W (depending on heat dissipation conditions)
- **Package**: TO3P
- **Channel Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Turn-On Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 3.6mΩ@VGS=4.5V
- 3mΩ@VGS=10V
- **Drain Current (ID)**: 210A
- **Technology**: Trench Technology
- **Maximum Power Dissipation**: Typically 75W (depending on heat dissipation conditions)
Domain and module applications：
Applications and modules:
1. **High power supply**:
K2955-VB is widely used in high power supply, especially in switching power supply for industrial and communication equipment. Due to its extremely low on-resistance and high current capability, this MOSFET can effectively improve conversion efficiency and reduce energy loss.
2. **Motor control and drive**:
In motor control applications, K2955-VB can be used as a switching device for motor drive, suitable for driving DC motors and stepper motors. Its high current handling capability ensures stable operation of the motor under various load conditions, especially suitable for industrial automation and robotic systems.
3. **Inverter and battery management system**:
K2955-VB is also suitable for inverter and battery management systems, especially in renewable energy applications such as solar inverters and battery management systems for electric vehicles. Its high efficiency and low heat loss characteristics can improve the overall efficiency and stability of the system.
4. **LED drive circuit**:
This MOSFET is suitable for LED lighting drive circuits, especially in high-brightness LED applications that require high current drive. Its low on-resistance helps improve the driving efficiency of LEDs, suitable for commercial lighting and home lighting equipment.
5. **Consumer electronics**:
K2955-VB is also suitable for power management of various consumer electronics products, such as game consoles, tablets and smart phones, meeting the growing demand for high performance and high efficiency of modern electronic products.
1. **High power supply**:
K2955-VB is widely used in high power supply, especially in switching power supply for industrial and communication equipment. Due to its extremely low on-resistance and high current capability, this MOSFET can effectively improve conversion efficiency and reduce energy loss.
2. **Motor control and drive**:
In motor control applications, K2955-VB can be used as a switching device for motor drive, suitable for driving DC motors and stepper motors. Its high current handling capability ensures stable operation of the motor under various load conditions, especially suitable for industrial automation and robotic systems.
3. **Inverter and battery management system**:
K2955-VB is also suitable for inverter and battery management systems, especially in renewable energy applications such as solar inverters and battery management systems for electric vehicles. Its high efficiency and low heat loss characteristics can improve the overall efficiency and stability of the system.
4. **LED drive circuit**:
This MOSFET is suitable for LED lighting drive circuits, especially in high-brightness LED applications that require high current drive. Its low on-resistance helps improve the driving efficiency of LEDs, suitable for commercial lighting and home lighting equipment.
5. **Consumer electronics**:
K2955-VB is also suitable for power management of various consumer electronics products, such as game consoles, tablets and smart phones, meeting the growing demand for high performance and high efficiency of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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