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K2953-VB Product details
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1. K2953-VB Product Introduction
K2953-VB is a high-voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 600V, which makes it have a wide range of application potential in industrial and power systems. The gate-source voltage (VGS) of K2953-VB is ±30V, and it has good conduction performance. When VGS is 10V, its on-resistance (RDS(ON)) is 280mΩ and the maximum drain current (ID) is 15A. This MOSFET is based on SJ_Multi-EPI technology, providing excellent thermal stability and switching characteristics, which can effectively reduce power consumption and improve system efficiency. It is widely used in power conversion, industrial drive and high-voltage switching power supplies.
K2953-VB is a high-voltage single N-channel MOSFET in TO3P package, designed for high voltage and medium current applications. Its drain-source voltage (VDS) is as high as 600V, which makes it have a wide range of application potential in industrial and power systems. The gate-source voltage (VGS) of K2953-VB is ±30V, and it has good conduction performance. When VGS is 10V, its on-resistance (RDS(ON)) is 280mΩ and the maximum drain current (ID) is 15A. This MOSFET is based on SJ_Multi-EPI technology, providing excellent thermal stability and switching characteristics, which can effectively reduce power consumption and improve system efficiency. It is widely used in power conversion, industrial drive and high-voltage switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. Detailed parameter description of K2953-VB
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Fast switching, suitable for high-frequency applications
- **Power consumption**: Optimized design for high energy efficiency and low heat
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Fast switching, suitable for high-frequency applications
- **Power consumption**: Optimized design for high energy efficiency and low heat
Domain and module applications：
3. K2953-VB applicable fields and modules
K2953-VB is suitable for a variety of application scenarios due to its excellent performance and high-voltage capability. The following are some typical fields and modules:
1. **Power conversion**: This MOSFET is widely used in switching power supplies and DC-DC converters, which can effectively manage and convert power and improve energy efficiency.
2. **Industrial drive**: In motor drive and automation control systems, K2953-VB can be used as a power switch to provide reliable current control for efficient motor operation.
3. **High-voltage switching power supply**: Due to its 600V high-voltage capability, K2953-VB is suitable for high-voltage switching power supply design, which can withstand high voltage fluctuations and ensure the stability and safety of the system.
4. **Solar inverter**: In photovoltaic power generation systems, this MOSFET can be used in inverter circuits to provide efficient DC to AC power conversion and improve the overall energy efficiency of the system.
5. **Electric vehicles**: In electric vehicles and electric bicycles, K2953-VB can be used to drive and control electric motors, improve the efficiency and performance of the power system, and meet the needs of high voltage and high efficiency.
K2953-VB is suitable for a variety of application scenarios due to its excellent performance and high-voltage capability. The following are some typical fields and modules:
1. **Power conversion**: This MOSFET is widely used in switching power supplies and DC-DC converters, which can effectively manage and convert power and improve energy efficiency.
2. **Industrial drive**: In motor drive and automation control systems, K2953-VB can be used as a power switch to provide reliable current control for efficient motor operation.
3. **High-voltage switching power supply**: Due to its 600V high-voltage capability, K2953-VB is suitable for high-voltage switching power supply design, which can withstand high voltage fluctuations and ensure the stability and safety of the system.
4. **Solar inverter**: In photovoltaic power generation systems, this MOSFET can be used in inverter circuits to provide efficient DC to AC power conversion and improve the overall energy efficiency of the system.
5. **Electric vehicles**: In electric vehicles and electric bicycles, K2953-VB can be used to drive and control electric motors, improve the efficiency and performance of the power system, and meet the needs of high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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