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K2901-01S-VB Product details
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**
K2901-01S-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and low power applications. It can withstand drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V, has extremely low on-resistance of only 11mΩ at VGS=10V, 12mΩ at VGS=4.5V, and maximum drain current (ID) can reach 75A. This product adopts Trench technology, which can effectively increase switching speed and reduce energy consumption, and is widely used in power management and other applications requiring high efficiency.
**2. K2901-01S-VB
K2901-01S-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and low power applications. It can withstand drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V, has extremely low on-resistance of only 11mΩ at VGS=10V, 12mΩ at VGS=4.5V, and maximum drain current (ID) can reach 75A. This product adopts Trench technology, which can effectively increase switching speed and reduce energy consumption, and is widely used in power management and other applications requiring high efficiency.
**2. K2901-01S-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Fast switching performance, suitable for high-frequency applications
- **Power consumption**: Optimized design, suitable for efficient energy conversion
**III. K2901-01S-VB
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Switching speed**: Fast switching performance, suitable for high-frequency applications
- **Power consumption**: Optimized design, suitable for efficient energy conversion
**III. K2901-01S-VB
Domain and module applications：
**
K2901-01S-VB MOSFET is widely used in many fields due to its high current carrying capacity and low on-resistance. The following are some typical applications:
1. **Power management**: This MOSFET is very suitable for switching power supplies and DC-DC converters. It can achieve efficient power conversion under high current conditions to ensure the stability and reliability of the system.
2. **Electric vehicles**: In the battery management system of electric vehicles, K2901-01S-VB can be used as a key component of motor drive, providing fast response speed and efficient energy utilization, which helps to improve the driving range and power performance of electric vehicles.
3. **Industrial automation**: In industrial control systems, K2901-01S-VB can be used for motor control and load switching. It can handle high current loads and has good thermal performance to ensure long-term stable operation of the equipment.
4. **Consumer electronics**: In various consumer electronics products, such as smartphones, tablets and other portable devices, K2901-01S-VB can be used for battery management and power regulation, helping to improve battery efficiency and extend battery life.
5. **LED driver**: This MOSFET performs well in LED lighting control, can achieve precise current regulation, improve the brightness uniformity and energy efficiency of LED lamps, and is suitable for various lighting application scenarios.
K2901-01S-VB MOSFET is widely used in many fields due to its high current carrying capacity and low on-resistance. The following are some typical applications:
1. **Power management**: This MOSFET is very suitable for switching power supplies and DC-DC converters. It can achieve efficient power conversion under high current conditions to ensure the stability and reliability of the system.
2. **Electric vehicles**: In the battery management system of electric vehicles, K2901-01S-VB can be used as a key component of motor drive, providing fast response speed and efficient energy utilization, which helps to improve the driving range and power performance of electric vehicles.
3. **Industrial automation**: In industrial control systems, K2901-01S-VB can be used for motor control and load switching. It can handle high current loads and has good thermal performance to ensure long-term stable operation of the equipment.
4. **Consumer electronics**: In various consumer electronics products, such as smartphones, tablets and other portable devices, K2901-01S-VB can be used for battery management and power regulation, helping to improve battery efficiency and extend battery life.
5. **LED driver**: This MOSFET performs well in LED lighting control, can achieve precise current regulation, improve the brightness uniformity and energy efficiency of LED lamps, and is suitable for various lighting application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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