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K2847-VB Product details
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**
K2847-VB is a high voltage N-channel power MOSFET in TO3P package, designed to withstand 900V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). This MOSFET adopts SJ_Multi-EPI technology and has high voltage resistance and reliability. The on-resistance (RDS(ON)) is 750mΩ at VGS=10V and the maximum drain current (ID) is 9A. It is suitable for high voltage power management and power conversion applications to ensure efficient and stable performance.
**2. K2847-VB
K2847-VB is a high voltage N-channel power MOSFET in TO3P package, designed to withstand 900V drain-source voltage (VDS) and ±30V gate-source voltage (VGS). This MOSFET adopts SJ_Multi-EPI technology and has high voltage resistance and reliability. The on-resistance (RDS(ON)) is 750mΩ at VGS=10V and the maximum drain current (ID) is 9A. It is suitable for high voltage power management and power conversion applications to ensure efficient and stable performance.
**2. K2847-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
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- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Switching speed**: Efficient switching performance, suitable for high-frequency applications
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Designed for low power consumption to achieve efficient energy conversion
**III. K2847-VB
- **Package type**: TO3P
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Switching speed**: Efficient switching performance, suitable for high-frequency applications
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Designed for low power consumption to achieve efficient energy conversion
**III. K2847-VB
Domain and module applications：
**
The K2847-VB MOSFET is widely used in a variety of fields and modules due to its high voltage capability and medium current output, including:
1. **High Voltage Power Management**: The K2847-VB is well suited for high voltage DC-DC converters and AC-DC power supplies, and can operate stably at 900V, providing efficient power conversion and control.
2. **Power Inverters**: In solar inverters and other power inverters, this MOSFET can achieve efficient energy conversion, meeting the requirements of renewable energy systems for stability and high efficiency.
3. **Industrial Equipment**: In high voltage industrial equipment and control systems, the K2847-VB can be used for motor drive and power control, providing reliable power dispatching functions and improving overall system efficiency.
4. **Electric Vehicle Charging System**: This MOSFET is also suitable for electric vehicle charging piles, capable of handling high voltage power to ensure the safety and efficiency of the charging process.
5. **Communication equipment**: In high-voltage communication and signal processing equipment, K2847-VB can be used for power amplification and signal conditioning to ensure the stability and high performance of the equipment.
The K2847-VB MOSFET is widely used in a variety of fields and modules due to its high voltage capability and medium current output, including:
1. **High Voltage Power Management**: The K2847-VB is well suited for high voltage DC-DC converters and AC-DC power supplies, and can operate stably at 900V, providing efficient power conversion and control.
2. **Power Inverters**: In solar inverters and other power inverters, this MOSFET can achieve efficient energy conversion, meeting the requirements of renewable energy systems for stability and high efficiency.
3. **Industrial Equipment**: In high voltage industrial equipment and control systems, the K2847-VB can be used for motor drive and power control, providing reliable power dispatching functions and improving overall system efficiency.
4. **Electric Vehicle Charging System**: This MOSFET is also suitable for electric vehicle charging piles, capable of handling high voltage power to ensure the safety and efficiency of the charging process.
5. **Communication equipment**: In high-voltage communication and signal processing equipment, K2847-VB can be used for power amplification and signal conditioning to ensure the stability and high performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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