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K2808-01MR-VB Product details
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K2808-01MR-VB MOSFET Product Introduction
The K2808-01MR-VB is a high-efficiency N-channel power MOSFET in a TO220F package, designed based on advanced Trench technology. The device has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 68A, making it suitable for high-current and high-efficiency applications. The on-resistance (RDS(ON)) of the K2808-01MR-VB is 2mΩ and 1mΩ at gate voltages of 4.5V and 10V, respectively, ensuring excellent performance in a variety of switching applications, reducing energy losses, and improving overall system efficiency and stability.
The K2808-01MR-VB is a high-efficiency N-channel power MOSFET in a TO220F package, designed based on advanced Trench technology. The device has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 68A, making it suitable for high-current and high-efficiency applications. The on-resistance (RDS(ON)) of the K2808-01MR-VB is 2mΩ and 1mΩ at gate voltages of 4.5V and 10V, respectively, ensuring excellent performance in a variety of switching applications, reducing energy losses, and improving overall system efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 30V | 1.7V | 68A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=4.5V
- 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 68A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: The TO220F package has excellent heat dissipation performance and is suitable for high power applications.
- **Package type**: TO220F
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=4.5V
- 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 68A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: The TO220F package has excellent heat dissipation performance and is suitable for high power applications.
Domain and module applications：
Applications and modules
1. **Power management systems**:
The K2808-01MR-VB is ideal for **high-efficiency switching power supplies** and **DC-DC converters**, which can significantly improve the efficiency of power conversion due to its low on-resistance and high current carrying capacity. Its excellent thermal performance and high current capability make it an ideal choice in modern power management.
2. **Motor drive**:
In **motor control systems**, the K2808-01MR-VB can be used as an efficient switching element to provide stable current output. Its fast switching characteristics and high load capacity enable it to maintain high efficiency during the start-stop and speed regulation of the motor, suitable for motor applications in power tools and home appliances.
3. **Automotive electronics**:
This MOSFET is suitable for **automotive power systems**, such as electric power steering and battery management systems. The high efficiency and reliability of the K2808-01MR-VB ensure stability in the automotive environment, helping to improve overall vehicle performance and safety.
4. **Consumer electronics**:
K2808-01MR-VB is also widely used in power modules in **consumer electronics**, such as chargers for portable devices and smart home devices. Due to its excellent conduction characteristics and miniaturized design, this MOSFET can effectively meet the requirements of modern devices for high performance and low power consumption.
1. **Power management systems**:
The K2808-01MR-VB is ideal for **high-efficiency switching power supplies** and **DC-DC converters**, which can significantly improve the efficiency of power conversion due to its low on-resistance and high current carrying capacity. Its excellent thermal performance and high current capability make it an ideal choice in modern power management.
2. **Motor drive**:
In **motor control systems**, the K2808-01MR-VB can be used as an efficient switching element to provide stable current output. Its fast switching characteristics and high load capacity enable it to maintain high efficiency during the start-stop and speed regulation of the motor, suitable for motor applications in power tools and home appliances.
3. **Automotive electronics**:
This MOSFET is suitable for **automotive power systems**, such as electric power steering and battery management systems. The high efficiency and reliability of the K2808-01MR-VB ensure stability in the automotive environment, helping to improve overall vehicle performance and safety.
4. **Consumer electronics**:
K2808-01MR-VB is also widely used in power modules in **consumer electronics**, such as chargers for portable devices and smart home devices. Due to its excellent conduction characteristics and miniaturized design, this MOSFET can effectively meet the requirements of modern devices for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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