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K27S60-VB Product details
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Product Introduction: K27S60-VB MOSFET
K27S60-VB is a high-performance single N-channel power MOSFET in TO247 package, designed to withstand drain-source voltage (VDS) up to 650V. The device has a maximum drain current (ID) of 47A and a turn-on threshold voltage (Vth) of 3.5V. At a gate drive voltage of 10V, its on-resistance (RDS(ON)) is 75mΩ. K27S60-VB is manufactured using advanced SJ_Multi-EPI technology, has good thermal management performance and high efficiency, and is suitable for a variety of high-voltage power supplies and power conversion applications.
K27S60-VB is a high-performance single N-channel power MOSFET in TO247 package, designed to withstand drain-source voltage (VDS) up to 650V. The device has a maximum drain current (ID) of 47A and a turn-on threshold voltage (Vth) of 3.5V. At a gate drive voltage of 10V, its on-resistance (RDS(ON)) is 75mΩ. K27S60-VB is manufactured using advanced SJ_Multi-EPI technology, has good thermal management performance and high efficiency, and is suitable for a variety of high-voltage power supplies and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Parameter description:
- **Package**: TO247
- **Channel Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation**: Typically 200W (depending on heat dissipation conditions)
- **Package**: TO247
- **Channel Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=10V
- **Drain current (ID)**: 47A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation**: Typically 200W (depending on heat dissipation conditions)
Domain and module applications：
Applications and modules:
1. **High-voltage power converters**:
The high withstand voltage and low on-resistance of the K27S60-VB make it ideal for high-voltage power converters, such as switching power supplies and DC-DC converters. In these applications, it can achieve efficient energy conversion and provide stable power output to meet the needs of modern power systems.
2. **Electric vehicle power management**:
In the power management system of electric vehicles, the K27S60-VB can be used for high-voltage power control and battery management. With its high current carrying capacity and efficient switching characteristics, this MOSFET can help improve overall energy efficiency and ensure the safety and stability of electric vehicles under various driving conditions.
3. **Industrial automation and drive systems**:
The K27S60-VB is also suitable for industrial automation equipment, especially motor drive and control systems. Because it can handle high power and high current, it is suitable for various types of industrial equipment, such as servo motor drives and transmission systems, thereby improving production efficiency and reliability.
4. **High-power LED driver**:
This MOSFET is also widely used in high-power LED driver circuits, especially in lighting applications that require high voltage and high current. K27S60-VB can reduce energy loss through low on-resistance, improve the working efficiency of LED driver modules, and achieve excellent lighting effects.
1. **High-voltage power converters**:
The high withstand voltage and low on-resistance of the K27S60-VB make it ideal for high-voltage power converters, such as switching power supplies and DC-DC converters. In these applications, it can achieve efficient energy conversion and provide stable power output to meet the needs of modern power systems.
2. **Electric vehicle power management**:
In the power management system of electric vehicles, the K27S60-VB can be used for high-voltage power control and battery management. With its high current carrying capacity and efficient switching characteristics, this MOSFET can help improve overall energy efficiency and ensure the safety and stability of electric vehicles under various driving conditions.
3. **Industrial automation and drive systems**:
The K27S60-VB is also suitable for industrial automation equipment, especially motor drive and control systems. Because it can handle high power and high current, it is suitable for various types of industrial equipment, such as servo motor drives and transmission systems, thereby improving production efficiency and reliability.
4. **High-power LED driver**:
This MOSFET is also widely used in high-power LED driver circuits, especially in lighting applications that require high voltage and high current. K27S60-VB can reduce energy loss through low on-resistance, improve the working efficiency of LED driver modules, and achieve excellent lighting effects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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