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K2699-VB Product details
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Product Introduction:
K2699-VB is a single-channel N-type power MOSFET in TO3P package, suitable for high-voltage applications. Its main features include 600V drain-source voltage (VDS), ±30V gate-source voltage (VGS), 3.5V threshold voltage (Vth) and 380mΩ on-resistance (RDS(ON)) @VGS=10V. The device adopts advanced super junction (SJ) multi-epitaxial technology, with low conduction loss and high efficiency. It can operate stably at a current of 11A and is suitable for high-voltage and high-efficiency application scenarios.
K2699-VB is a single-channel N-type power MOSFET in TO3P package, suitable for high-voltage applications. Its main features include 600V drain-source voltage (VDS), ±30V gate-source voltage (VGS), 3.5V threshold voltage (Vth) and 380mΩ on-resistance (RDS(ON)) @VGS=10V. The device adopts advanced super junction (SJ) multi-epitaxial technology, with low conduction loss and high efficiency. It can operate stably at a current of 11A and is suitable for high-voltage and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description:
1. **Drain-source voltage (VDS)**: 600V
2. **Gate-source voltage (VGS)**: ±30V
3. **Threshold voltage (Vth)**: 3.5V
4. **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
5. **Maximum drain current (ID)**: 11A
6. **Package type**: TO3P
7. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi Technology)
8. **Operating temperature range**: -55°C to 150°C
9. **Power dissipation**: 150W
10. **Switching speed**: High-speed switching performance, suitable for high-frequency power applications
1. **Drain-source voltage (VDS)**: 600V
2. **Gate-source voltage (VGS)**: ±30V
3. **Threshold voltage (Vth)**: 3.5V
4. **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
5. **Maximum drain current (ID)**: 11A
6. **Package type**: TO3P
7. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi Technology)
8. **Operating temperature range**: -55°C to 150°C
9. **Power dissipation**: 150W
10. **Switching speed**: High-speed switching performance, suitable for high-frequency power applications
Domain and module applications：
Applications and module examples:
1. **Switching Power Supply (SMPS)**: K2699-VB is suitable for the power conversion part of high-voltage switching power supplies, providing efficient energy conversion and reducing power loss, especially suitable for telecommunications equipment, server power supplies and data center applications.
2. **Electric Vehicle Charging Station and Inverter**: This MOSFET plays an important role in electric vehicle charging stations and inverter modules, using its high voltage capability and low on-resistance to improve energy efficiency and heat dissipation capabilities, and adapt to high voltage input and fast switching requirements.
3. **Lighting System and LED Driver**: In high-power LED drivers and lighting systems, K2699-VB can help improve system efficiency, extend equipment life, and reduce power loss through its efficient current management characteristics.
4. **Photovoltaic Inverters**: In photovoltaic inverters, K2699-VB can achieve efficient energy conversion, helping to convert DC power into AC power, and is used in solar panel systems.
5. **Industrial Motor Drive**: Due to its high voltage and strong current carrying capacity, this device is suitable for industrial motor drive applications. It can control and regulate the motor drive of large industrial equipment with high reliability and durability.
1. **Switching Power Supply (SMPS)**: K2699-VB is suitable for the power conversion part of high-voltage switching power supplies, providing efficient energy conversion and reducing power loss, especially suitable for telecommunications equipment, server power supplies and data center applications.
2. **Electric Vehicle Charging Station and Inverter**: This MOSFET plays an important role in electric vehicle charging stations and inverter modules, using its high voltage capability and low on-resistance to improve energy efficiency and heat dissipation capabilities, and adapt to high voltage input and fast switching requirements.
3. **Lighting System and LED Driver**: In high-power LED drivers and lighting systems, K2699-VB can help improve system efficiency, extend equipment life, and reduce power loss through its efficient current management characteristics.
4. **Photovoltaic Inverters**: In photovoltaic inverters, K2699-VB can achieve efficient energy conversion, helping to convert DC power into AC power, and is used in solar panel systems.
5. **Industrial Motor Drive**: Due to its high voltage and strong current carrying capacity, this device is suitable for industrial motor drive applications. It can control and regulate the motor drive of large industrial equipment with high reliability and durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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