K2698-VB Product details
Product introduction:
K2698-VB is an N-channel power MOSFET in a TO247 package with a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V. This product adopts superjunction (SJ) multi-layer epitaxial (Multi-EPI) technology, has low on-resistance and high current carrying capacity, and is very suitable for high-voltage, high-efficiency application environments. Its on-resistance (RDS(ON)) is 80mΩ at VGS=10V, the maximum drain current (ID) can reach 40A, and the gate threshold voltage (Vth) is 3.8V, ensuring low losses during switching.
**2. K2698-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ@VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Superjunction (SJ) multi-epitaxy (Multi-EPI)
- **Gate charge (Qg)**: Typical value is low, which helps fast switching
- **Switching speed**: Efficient switching performance is suitable for high-frequency applications
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Low power design, suitable for efficient power conversion systems
**3. K2698-VB
Domain and module applications:
K2698-VB MOSFET is very suitable for the following fields and modules due to its high voltage and high current handling capabilities and low conduction loss characteristics using super junction multilayer epitaxial technology:
1. **Power management module**: K2698-VB is suitable for high voltage DC-DC converters and AC-DC switching power supplies, especially for efficient power conversion in server power supplies and industrial power supplies. Its 500V withstand voltage enables it to handle high power loads and is suitable for use in power supply systems with high voltage output.
2. **Inverter module**: This MOSFET is suitable for the power switch part of photovoltaic inverters and wind power inverter systems. It can provide efficient energy conversion under high voltage and high frequency conditions, while its low on-resistance ensures low power consumption operation.
3. **Motor control module**: K2698-VB performs well in industrial motor drives, inverters and servo control systems. Its high current carrying capacity and fast switching performance enable it to effectively reduce power consumption and improve the operating efficiency of motors.
4. **Electric vehicles and charging piles**: This device is suitable for high-voltage modules in electric vehicle charging piles, especially in fast charging circuits, where it can provide efficient power transmission, improve charging efficiency, and reduce heat loss.
5. **Industrial automation and robotics**: In automated production lines and robotic control systems, K2698-VB can achieve efficient energy allocation and support complex machine control logic through precise current control and fast switching response.
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