K2684STL-E-VB Product details
Product introduction:
K2684STL-E-VB is a high-performance single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of the device is 30V, and it can operate stably at a gate-source voltage (VGS) of up to ±20V. Its threshold voltage (Vth) is 1.7V, ensuring that it can be turned on at a lower gate voltage, suitable for use in low power and high efficiency applications. The on-resistance (RDS(ON)) of K2684STL-E-VB is only 12mΩ at VGS=10V, ensuring excellent energy efficiency at high currents, and the maximum drain current (ID) can reach 50A. Using advanced Trench technology, this MOSFET provides excellent switching performance and thermal stability, and is very suitable for various power management and power conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench
- **Maximum power dissipation**: 45W
- **Operating temperature range**: -55°C ~ 150°C
- **Input capacitance (Ciss)**: 1200pF (Typical value)
- **Output capacitance (Coss)**: 200pF (Typical value)
- **Reverse recovery time (trr)**: 75ns (Typical value)
Domain and module applications:
1. **DC-DC converter**
K2684STL-E-VB is very suitable for use in switching DC-DC converters, which can effectively convert high input voltage to the required low output voltage. It is widely used in power management systems to provide efficient energy conversion.
2. **Battery management system**
In the battery management system, this MOSFET can be used for battery charging and discharging control to ensure low energy loss under high current flow, thereby improving the efficiency and reliability of the overall system, especially in electric vehicles and renewable energy storage devices.
3. **Motor drive**
K2684STL-E-VB can be used to drive DC motors, provide high current support, and ensure high efficiency under various working conditions. It is widely used in automation equipment, industrial control, power tools and other fields.
4. **LED driver**
This MOSFET is also suitable for use in LED driver power supplies, capable of handling high currents without generating significant heat, ensuring stable brightness of the LED and extending its service life.
In summary, the K2684STL-E-VB is a high-performance MOSFET designed for low-voltage, high-current applications, with good energy efficiency and reliability, suitable for use in a variety of power management and power conversion situations.
Technical support:
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