K2631-TL-VB Product details
Product introduction:
K2631-TL-VB is a high voltage single N-channel MOSFET in TO252 package, designed for 800V high voltage applications. The maximum drain-source voltage (VDS) of this device can reach 800V, which is suitable for a variety of power management and control systems that require high voltage. Its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring that it can be turned on reliably under appropriate gate voltage. The on-resistance (RDS(ON)) is 2600mΩ at VGS=10V, which is suitable for applications with strict requirements on power consumption. K2631-TL-VB adopts SJ_Multi-EPI technology, has good switching characteristics and thermal stability, and is particularly suitable for power electronics, industrial control and power conversion.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation**: 25W
- **Operating temperature range**: -55°C ~ 150°C
- **Input capacitance (Ciss)**: 600pF (typical)
- **Output capacitance (Coss)**: 70pF (typical)
- **Reverse recovery time (trr)**: 90ns (typical)
Domain and module applications:
1. **High-voltage power management**
K2631-TL-VB is suitable for high-voltage power converters, which can effectively convert high-voltage DC sources into low voltages to supply various electrical devices. The 800V withstand voltage makes it excel in the field of power management, especially in high-power applications.
2. **Industrial equipment drive**
In industrial equipment, K2631-TL-VB can be used to drive high-voltage motors and loads. It has reliable switching characteristics, can improve the efficiency and safety of equipment, and is widely used in automation and control systems.
3. **Power electronics applications**
This MOSFET can be used as a switching device in power electronics systems, especially for applications that require fast switching and efficient energy transmission, such as inverters and rectifiers, and can effectively manage power flow.
4. **Electrical control system**
K2631-TL-VB is also suitable for various electrical control systems, such as uninterruptible power supply (UPS) and power adapter. Its high withstand voltage and medium current capability enable it to work stably in harsh environments.
In summary, K2631-TL-VB is a MOSFET designed for high voltage applications. It is widely used in power management, motor drive and power electronic systems, and has good market prospects and application potential.
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