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K2615-VB Product details
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1. Product Introduction:
K2615-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) can withstand ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of K2615-VB is 88mΩ when VGS is 4.5V, and 76mΩ when VGS is 10V, and the maximum drain current (ID) can reach 5.5A. This MOSFET using Trench technology has excellent switching performance and thermal stability, and is suitable for a variety of low-power, high-efficiency electronic devices.
K2615-VB is a high-performance single N-channel MOSFET in SOT89 package, designed for low voltage and high current applications. Its drain-source voltage (VDS) is 60V, the gate-source voltage (VGS) can withstand ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of K2615-VB is 88mΩ when VGS is 4.5V, and 76mΩ when VGS is 10V, and the maximum drain current (ID) can reach 5.5A. This MOSFET using Trench technology has excellent switching performance and thermal stability, and is suitable for a variety of low-power, high-efficiency electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
2. Detailed parameter description:
- **Package form**: SOT89
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Maximum drain current (ID)**: 5.5A
- **Technology type**: Trench technology
- **Package form**: SOT89
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 88mΩ@VGS=4.5V
- 76mΩ@VGS=10V
- **Maximum drain current (ID)**: 5.5A
- **Technology type**: Trench technology
Domain and module applications：
3. Application fields and module examples:
1. **Power management**: K2615-VB is very suitable for use as a switching element in power management modules. It can effectively control current and provide efficient power conversion. It is widely used in battery-powered mobile devices such as smartphones and portable electronic products.
2. **LED driver**: In LED lighting applications, K2615-VB can be used as a driver to support high current output, thereby achieving efficient control of LEDs. It is suitable for home lighting, commercial lighting and automotive lighting systems.
3. **Portable devices**: This MOSFET can be used in the switching circuits of various portable devices, such as wireless headphones, handheld game consoles, etc., to ensure low power consumption and long battery life during operation.
4. **Power tools**: The high current carrying capacity of K2615-VB makes it suitable for power management of power tools. It can effectively control the start and stop of the motor, improve the working efficiency and safety of the tools.
With its excellent performance and reliability, K2615-VB is an ideal choice in modern electronic design, able to meet a variety of application requirements and improve the efficiency and performance of the overall system.
1. **Power management**: K2615-VB is very suitable for use as a switching element in power management modules. It can effectively control current and provide efficient power conversion. It is widely used in battery-powered mobile devices such as smartphones and portable electronic products.
2. **LED driver**: In LED lighting applications, K2615-VB can be used as a driver to support high current output, thereby achieving efficient control of LEDs. It is suitable for home lighting, commercial lighting and automotive lighting systems.
3. **Portable devices**: This MOSFET can be used in the switching circuits of various portable devices, such as wireless headphones, handheld game consoles, etc., to ensure low power consumption and long battery life during operation.
4. **Power tools**: The high current carrying capacity of K2615-VB makes it suitable for power management of power tools. It can effectively control the start and stop of the motor, improve the working efficiency and safety of the tools.
With its excellent performance and reliability, K2615-VB is an ideal choice in modern electronic design, able to meet a variety of application requirements and improve the efficiency and performance of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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