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K2611S-VB Product details
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K2611S-VB MOSFET Product Introduction
The K2611S-VB is a **single N-channel** MOSFET in a **TO247** package, designed for high voltage applications. With a **drain-source voltage (VDS)** of up to **900V**, the device is suitable for applications such as high voltage power supplies and converters. Its **gate-source voltage (VGS)** is ±30V, which can support a wide range of drive circuits. The **threshold voltage (Vth)** of the K2611S-VB is 3.5V, ensuring smooth turn-on at a relatively low gate drive voltage, thereby optimizing the energy efficiency of the system. In addition, the device's **on-resistance (RDS(ON))** is 750mΩ @ VGS=10V, minimizing power dissipation and making it perform well in high current applications.
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The K2611S-VB is a **single N-channel** MOSFET in a **TO247** package, designed for high voltage applications. With a **drain-source voltage (VDS)** of up to **900V**, the device is suitable for applications such as high voltage power supplies and converters. Its **gate-source voltage (VGS)** is ±30V, which can support a wide range of drive circuits. The **threshold voltage (Vth)** of the K2611S-VB is 3.5V, ensuring smooth turn-on at a relatively low gate drive voltage, thereby optimizing the energy efficiency of the system. In addition, the device's **on-resistance (RDS(ON))** is 750mΩ @ VGS=10V, minimizing power dissipation and making it perform well in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: K2611S-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI, providing high performance and thermal management
- **Operating temperature range**: Suitable for working in high temperature and harsh environment
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- **Model**: K2611S-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 750mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI, providing high performance and thermal management
- **Operating temperature range**: Suitable for working in high temperature and harsh environment
---
Domain and module applications：
Application fields and module examples
The K2611S-VB MOSFET is suitable for multiple fields and modules due to its excellent electrical characteristics. Specific examples are as follows:
1. **High-voltage power supply**: The K2611S-VB is an ideal choice in high-voltage DC-DC converters, which can effectively handle voltages up to 900V to ensure the reliability and stability of the power supply.
2. **Solar inverter**: In solar power generation systems, the K2611S-VB can be used in inverters to help convert DC power into AC power and optimize energy conversion efficiency.
3. **Electric vehicle charging stations**: This MOSFET can be used in high-voltage charging systems in electric vehicle charging stations, supporting fast charging and high-efficiency energy management to ensure a safe and reliable charging experience.
4. **Industrial motor drive**: The K2611S-VB can be used in the drive circuits of various industrial motors, providing high voltage and high current control to meet various industrial automation needs.
5. **Power Amplifier**: In high frequency applications, such as RF power amplifiers, K2611S-VB can be used to amplify high power signals to ensure signal quality and output efficiency.
K2611S-VB is a high voltage, high performance MOSFET suitable for playing an important role in multiple high power and high voltage applications.
The K2611S-VB MOSFET is suitable for multiple fields and modules due to its excellent electrical characteristics. Specific examples are as follows:
1. **High-voltage power supply**: The K2611S-VB is an ideal choice in high-voltage DC-DC converters, which can effectively handle voltages up to 900V to ensure the reliability and stability of the power supply.
2. **Solar inverter**: In solar power generation systems, the K2611S-VB can be used in inverters to help convert DC power into AC power and optimize energy conversion efficiency.
3. **Electric vehicle charging stations**: This MOSFET can be used in high-voltage charging systems in electric vehicle charging stations, supporting fast charging and high-efficiency energy management to ensure a safe and reliable charging experience.
4. **Industrial motor drive**: The K2611S-VB can be used in the drive circuits of various industrial motors, providing high voltage and high current control to meet various industrial automation needs.
5. **Power Amplifier**: In high frequency applications, such as RF power amplifiers, K2611S-VB can be used to amplify high power signals to ensure signal quality and output efficiency.
K2611S-VB is a high voltage, high performance MOSFET suitable for playing an important role in multiple high power and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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